Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High thermal cycling performance 50TPS16 SCR TO-247-3L
  • High thermal cycling performance 50TPS16 SCR TO-247-3L
  • High thermal cycling performance 50TPS16 SCR TO-247-3L
  • High thermal cycling performance 50TPS16 SCR TO-247-3L
  • High thermal cycling performance 50TPS16 SCR TO-247-3L
  • High thermal cycling performance 50TPS16 SCR TO-247-3L

High thermal cycling performance 50TPS16 SCR TO-247-3L

  • $1.25
    500-4999
    Piece/Pieces
  • $1
    ≥5000
    Piece/Pieces
Share:
Chat Now
  • Product Description
Overview
Product Attributes

Model No.YZPST-50TPS16

BrandYZPST

Place Of OriginChina

Tstg-40 ~ 150℃

Tj-40~ 125℃

VDRM1200/1600V

VRRM1200/1600V

VDSMVDRM +100V

VRSMVRRM +100V

IT(RMS)50A

ITSM630A

Di/dt150A/μS

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
YZPST-50TPS 50A SCR series
High thermal cycling performance 50TPS16 SCR TO-247-3L
FEATURES
 High thermal cycling performance
 High voltage capacity
 Very high current surge capability
 APPLICATIONS
 Line rectifying 50/60 Hz
 Softstart AC motor control
 DC Motor control
 Power converter
 AC power control
 Lighting and temperature control


YZPST-50TPS16 TO-247

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storagejunction  temperature range

Tstg

-40 ~ 150

Operating junction temperature range

Tj

-40~ 125

Repetitive peak off-state voltage (T =25℃)

VDRM

1200/1600

V

Repetitive peak reverse voltage (T =25℃)

VRRM

1200/1600

V

Non repetitive surge peak Off-state voltage

VDSM

VDRM  +100

V

Non repetitive peak reverse voltage

VRSM

VRRM  +100

V

RMS on-state current (T = 100℃)

IT(RMS)

50

A

Non repetitive surge peak on-state current

ITSM

630

A

I2t value for fusing (tp= 10ms)

I2t

2450

A2 S

Critical rate of rise of on-state curren

t(I =2×IGT, tr ≤ 100 ns)

di/dt

150

A/μS

Peak gate current

IGM

2.5

A

Average gate power dissipation

PG(AV)

2.5

W



Thermal Resistances
Symbol Parameter Value Unit
TO-3P 0.6
Rth(j-c) Junction to case (DC) TO-247 0.55 ℃/W
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
Symbol Test Condition Value Unit
MIN. TYP. MAX.
IGT V = 12V R = 140Ω 20 40 60 mA
VGT 1.3 V
VGD VD=VDRM Tj= 125 R= 1KΩ 0.2 V
IL IG= 1.2IGT 300 mA
IH IT= 50mA 200 mA
dV/dt VD=2/3VDRM  Gate Open  Tj=125℃ 500 V/μs
STATIC CHARACTERISTICS
Symbol Parameter Value(MAX  ) Unit
VTM ITM = 140A tp=380μs Tj =25℃ 1.8 V
IDRM VD=VDRM  VR=VRRM Tj =25℃ 200 μA
IRRM Tj =125℃ 8 mA

TO-247 Package Mechanical Data

TO-247 Package Mechanical Data



Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

Download
Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High thermal cycling performance 50TPS16 SCR TO-247-3L
Email to this supplier
  • *Subject:
  • *To:
    Mr. John chang
  • *Email:
  • *Message:
    Your message must be between 20-8000 characters
Send Inquiry
*
*

Related Products List

Home

Product

Whatsapp

About Us

Inquiry

苏ICP备05018286号-1
We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send