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20A S2035 SCRs series is suitable to fit all modes of control

$0.13

5000-49999
Piece/Pieces
$0.1

≥50000
Piece/Pieces

option:

IT(RMS):31A
VDRM:1200V
VRRM:1200V
IGT:35mA
Tstg:-40 ~150℃
Tj:-40 ~125℃

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-S2035

Brand: YZPST

Place Of Origin: China

IT(RMS): 31A

VDRM: 1200V

VRRM: 1200V

IGT: 35mA

Tstg: -40 ~150℃

Tj: -40 ~125℃

VDSM: 1300V

VRSM: 1300V

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000000000

Transportation: Ocean,Land,Express

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

YZPST-S2035

20A SCRs

DESCRIPTION:
Glasspassivated thyristors in a plastic envelope, The S2035 SCRs series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition ,Softstart AC motor control and voltage regulation circuits…

MAIN FEATURES

Symbol	Value	Unit
I_T(RMS)	31	A
V_DRM V_RRM	1200	V
I_GT	35	mA

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40 ~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (T =25℃)	V_DRM	1200	V
Repetitive peak reverse voltage (T =25℃)	V_R_RM	1200	V
Non repetitive surge peak Off-state voltage	V_DSM	V_DRM +100	V
Non repetitive peak reverse voltage	V_R_SM	V_R_RM +100	V
RMS on-state current (T =100℃)	I_T(RMS)	31	A
Non repetitive surge peak on-state current	I_TSM	300	A
Average on-state current (180° conduction angle)	I_T(AV)	20	A
I²t value for fusing (tp=10ms)	I²t	450	A²S
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns)	dI/dt	50	A/μS
Peak gate current	I_GM	4	A
Average gate power dissipation	P_G(AV)	1	W

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol

Test Condition

Value

Unit

I_GT

V =12V R =140Ω

MAX.

35

mA

V_GT

MAX.

1.3

V

V_GD

V_D=V_DRM Tj=125℃ R=1KΩ

MIN.

0.2

V

I_L

I_G=1.2I_GT

MAX.

75

mA

I_H

IT=50mA

MAX.

50

mA

dV/dt

V_D=2/3V_DRM Gate Open Tj=125℃

MIN.

500

V/μs

STATIC CHARACTERISTICS

Symbol

Parameter

Value(MAX.)

Unit

V_TM

I_TM =40A tp=380μs

Tj =25℃

1.65

V

I_DRM

V_D=V_DRM V_R=V_RRM

Tj =25℃

20

μA

I_RRM

Tj =125℃

4

mA

Thermal Resistances

Symbol

Parameter

Value(MAX.)

Unit

Rth(j-a)

junction to ambient(DC)

60

℃/W

Rth(j-c)

Junction to case (DC)

1.0

TO-220M1 Package Mechanical Data

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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Symbol	Test Condition		Value	Unit
I_GT	V =12V R =140Ω	MAX.	35	mA
V_GT	V =12V R =140Ω	MAX.	1.3	V
V_GD	V_D=V_DRM Tj=125℃ R=1KΩ	MIN.	0.2	V
I_L	I_G=1.2I_GT	MAX.	75	mA
I_H	IT=50mA	MAX.	50	mA
dV/dt	V_D=2/3V_DRM Gate Open Tj=125℃	MIN.	500	V/μs

Symbol	Parameter		Value(MAX.)	Unit
V_TM	I_TM =40A tp=380μs	Tj =25℃	1.65	V
I_DRM	V_D=V_DRM V_R=V_RRM	Tj =25℃	20	μA
I_RRM	V_D=V_DRM V_R=V_RRM	Tj =125℃	4	mA