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High dv/dt rate TO-92 0.8A SCR

$39

200-1999
Others
$32

≥2000
Others

option:

lT(RMS):0.8A
VTM:<1.5V
lTSM:10A
l2t:0.5A2s
Tstg:-40~150℃
Tj:-40~110℃

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BT169 10-30UA

Brand: YZPST

Place Of Origin: China

LT(RMS): 0.8A

VTM: <1.5V

Tstg: -40~150℃

Tj: -40~110℃

LTSM: 10A

L2t: 0.5A2s

Dl/dt: 50A/μs

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 100000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: 1000 pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

YZPST-BT169 SCR

DESCRIPTION:

The B T 1 6 9 ScR series provide high dv/dt rate

with strong resistance to electromagnetic interface.

They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.

YZPST-BT169 10-30UA TO-92

MAIN FEATURES:

symboI	vaIue	unit
lT(RMS)	0.8	A
VDRM/VRRM	400/600/800	V
VTM	<1.5	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	SymboI	vaIue	Unit
Storage junction temperature range	Tstg	-40~150	℃
operating junction temperature range	Tj	-40~110	℃
Repetitive peak off-state voltage (Tj=25℃)	VDRM	400/600/800	V
Repetitive peak reverse voltage (Tj=25℃)	VRRM	400/600/800	V
RMS on-state current (Tc=80℃)	lT(RMS)	0.8	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	lTSM	10	A
l2t value for fusing (tp=10ms)	l2t	0.5	A2s
critical rate of rise of on-state current (lG=2xlGT)	dl/dt	50	A/μs
Peak gate current	lGM	0.2	A
Average gate power dissipation	PG(AV)	0.1	W
Peak gate power	PGM	0.5	W

ELECTRICAL CHARACTERISTICS (Tj=25K Unless otherwise specified)

SymboI		vaIue
SymboI	Test Condition	MlN	TYPE	MAX	unit
lGT		-	20	200	μA
VGT	VD=12V, RL=33Ω	-	0.5	1	V
	VD=VDRM Tj=110K
VGD	RL=3.3KΩ	0.2	-	-	V
lH	lT=50mA	-	-	2	mA
lL	lG=1.2lGT	-	-	3	mA
	VD=0.66XVDRM Tj=110K
dV/dt	G RGK=1KΩ	20	-	-	V/μs