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MCR100-8 Series 0.8A TO-92 Sensitive SCR

$0.021

1000-9999
Piece/Pieces
$0.018

≥10000
Piece/Pieces

option:

IT(RMS):1A
VDRM:600V
VRRM:600V
VTM:≤1.5V
IGM:0.2A
ITSM:8A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-MCR100-8

Brand: YZPST

Place Of Origin: China

IT(RMS): 1A

VDRM: 600V

VRRM: 600V

VTM: ≤1.5V

ITSM: 8A

I2t: 0.32A2s

IGM: 0.2A

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N: YZPST-MCR100-8

MCR100-8 Series 0.8A Sensitive SCRs

DESCRIPTION:

The MCR100-8 SCR series provide high dv/dt rate

with strong resistance to electromagnetic interface.

They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.

MAIN FEATURES:

symbol	value	unit
IT(RMS)	1	A
VDRM/VRRM	600	V
VTM	≤1.5	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~110	℃
Repetitive peak off-state voltage (Tj=25℃)	VDRM	600	V
Repetitive peak reverse voltage (Tj=25℃)	VRRM	600	V
RMS on-state current	IT(RMS)	0.8	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	8	A
I2t value for fusing (tp=10ms)	I2t	0.32	A2s
Critical rate of rise of on-state current (IG=2 × IGT)	dI/dt	50	A/ μs
Peak gate current	IGM	0.2	A
Average gate power dissipation	PG(AV)	0.1	W
Peak gate power	PGM	0.5	W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Symbol	Test Condition	Value			Unit
Symbol	Test Condition	MIN	TYPE	MAX	Unit
IGT	VD=12V, RL=33Ω	-	20	200	µA
VGT	VD=12V, RL=33Ω	-	0.6	0.8	V
VGD	VD=VDRM Tj=110℃ RL=3.3kΩ	0.2	-	-	V
IH	IT=50mA	-	-	5	mA
IL	IG=1.2IGT	-	-	6	mA
dV/dt	VD=0.66×VDRM Tj=110℃ G open RGK=1KΩ	10	-	-	V/ µs