Home > Products > Semiconductor Plastic Package > Silicon Transistor > BD139-16 NPN silicon transistor complementary BD140-16

Contact Supplier

Mr. John chang

Leave a message

Contact Now

BD139-16 NPN silicon transistor complementary BD140-16

$0.03

20000-59999
Piece/Pieces
$0.02

≥60000
Piece/Pieces

option:

VCBO：80V
VCEO:80V
VEBO:5.0V
IC:1.5A
IB:0.5A
Ptot:12.5W
Tj:150℃

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-BD139-16

Brand: YZPST

Place Of Origin: China

VCBO: 80V

VCEO: 80V

VEBO: 5.0V

IC: 1.5A

IB: 0.5A

Ptot: 12.5W

Tj: 150℃

Tstg: -55~150℃

Supply Ability & Additional Information

Productivity: 1000000000

Transportation: Ocean,Land

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

NPN SILICON TRANSISTOR P/N:YZPST-BD139-16

BD139-16 NPN silicon transistor complementary PNP types are the BD140-16

DESCRIPTION
The BD139-16 is silicon epitaxial planar NPN transistors
in Jedec TO-126 plastic package, designed for audio
amplifiers and drivers utilizing complementary or quasi
compementary circuits.

The complementary PNP types are the BD140-16

YZPST-BD139-16

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	80	V
Collector-Emitter Voltage	VCEO	80	V
Emitter-Base Voltage	VEBO	5.0	V
Collector Current	IC	1.5	A
Base Current	IB	0.5	A
Total Dissipation at	Ptot	12.5	W
Max. Operating Junction Temperature	Tj	150	oC
Storage Temperature	Tstg	-55~150	oC

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Collector Cut-off Current	ICBO	VCB = 80V, IE = 0			10	μA
Collector Cut-off Current	ICBO	VCB = 80V, IE = 0	—	—	10	μA
Emitter Cut-off Current	IEBO
Emitter Cut-off Current	IEBO	VEB = 5.0V, IC = 0			10	μA
	VCEO
Collector-Emitter Sustaining Voltage	VCEO	IC = 1.0mA, IB = 0	80	—	—	V
		VCE = 2.0V, IC = 0.15A	100		250
DC Current Gain	hFE
		VCE = 2.0V, IC = 0.5A	100	—	—
	VCE(sat)
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 0.5A, IB = 0.05A			0.5	V
	VBE
Base-Emitter Voltage	VBE	IC = 0.5A, VCE = 2.0V			1	V
	fT
Transition Frequency	fT	VCE = 5V,IC = 50mA	80			MHz