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TO-247 DC-AC converter Complementary NPN transistors

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Incoterm:

FOB,CFR,CIF

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Transportation:

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Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-2SDW100

Brand: YZPST

Certification: CE

Encapsulation Structure: Plastic Sealed Transistor

Supply Ability & Additional Information

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Complementary power Darlington transistors

YZPST-2SDW100

Features

■ Complementary NPN - PNP transistors

■ Monolithic Darlington configuration

Applications

■ Audio power amplifier

■ DC-AC converter

■ Low voltage DC motor drive

■ General purpose switching applications

Description

The devices are manufactured in planar technology with [base island" layout and monolithic Darlington configuration.

Table 1. Device summary

Order code

Marking

Package

Packaging

2SDW100

TO-247

Tube

2SDW200

1 Absolute maximun ratings

Table 2. Absolute maximum ratings

Symbol	Parameter	Value		Unit
		NPN	2SDW100
		PNP	2SDW200
VCBO	Collector-emitter voltage (IE = 0)		80	V
VCEO	Collector-emitter voltage (IB = 0)		80	V
IC	Collector current		25	A
ICM	Collector peak current (tP < 5 ms)		40	A
IB	Base current		6	A
IBM	Base peak current (tP < 5 ms)		10	A
PTOT	Total dissipation at Tc ≤ 25 °C		130	W
TSTG	Storage temperature		-65 to 150	°C
TJ	Max. operating junction temperature		150	°C

Note: For PNP type voltage and current values are negative

Table 3. Thermal data

Symbol	Parameter	Value	Unit
RthJC	Thermal resistance junction-case max	0.96	°C/W

2 Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
ICBO	Collector cut-off current (IE = 0)	VCE = 80 V			0.5	mA
ICEV	Collector cut-off current (VBE = - 0.3 V)	VCE = 80 V			0.1	mA
ICEO	Collector cut-off current (IB = 0)	VCE = 60 V			0.5	mA
IEBO	Emitter cut-off current (IC = 0)	VEB = 5 V			2	mA
VCEO(sus) (1)	Collector-emitter sustaining voltage (IB = 0)	IC = 50 mA	80			V
VCE(sat)(1)	Collector-emitter saturation voltage	IC = 5 A IB = 20 mA IC = 10 A IB = 40 mA IC = 20 A IB = 80 mA			1.2 1.75 3.5	V V V
VBE(sat)(1)	Base-emitter saturation voltage	C B			3.3	V
(1)	Base-emitter voltage	I = 10 A V = 3 V	1		3	V
hFE(1)	DC current gain	IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V	600 500 300		15000 12000 6000
VF(1)	Diode forward voltage	IF = 10 A		TBD		V
Is/b	Second breakdown current	VCE = 25 V t = 500 ms		TBD		A

Table 4. Electrical characteristics

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
ICBO	Collector cut-off current (IE = 0)	VCE = 80 V			0.5	mA
ICEV	Collector cut-off current (VBE = - 0.3 V)	VCE = 80 V			0.1	mA
ICEO	Collector cut-off current (IB = 0)	VCE = 60 V			0.5	mA
IEBO	Emitter cut-off current (IC = 0)	VEB = 5 V			2	mA
VCEO(sus) (1)	Collector-emitter sustaining voltage (IB = 0)	IC = 50 mA	80			V
VCE(sat)(1)	Collector-emitter saturation voltage	IC = 5 A IB = 20 mA IC = 10 A IB = 40 mA IC = 20 A IB = 80 mA			1.2 1.75 3.5	V V V
VBE(sat)(1)	Base-emitter saturation voltage	C B			3.3	V
(1)	Base-emitter voltage	I = 10 A V = 3 V	1		3	V
hFE(1)	DC current gain	IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V	600 500 300		15000 12000 6000
VF(1)	Diode forward voltage	IF = 10 A		TBD		V
Is/b	Second breakdown current	VCE = 25 V t = 500 ms		TBD		A

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.

For PNP type voltage and current values are negative.

TO-247 Mechanical data

Dim.	mm.
Dim.	Min.	Typ	Max.
A	4.85		5.15
A1	2.20		2.60
b	1.0		1.40
b1	2.0		2.40
b2	3.0		3.40
c	0.40		0.80
D	19.85		20.15
E	15.45		15.75
e		5.45
L	14.20		14.80
L1	3.70		4.30
L2		18.50
øP	3.55		3.65
øR	4.50		5.50
S		5.50