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High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET

$4.5

200-999
Piece/Pieces
$4.2

≥1000
Piece/Pieces

option:

VDSmax:1200V
VGSmax:-10/+25V
VGSop:-5/+20V
ID Tc=25℃:36A
ID Tc=100℃:24A
ID(pulse):80A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-M1A080120L1

Brand: YZPST

Place Of Origin: China

VDSmax: 1200V

VGSmax: -10/+25V

VGSop: -5/+20V

ID Tc=25℃: 36A

ID Tc=100℃: 24A

ID(pulse): 80A

PD: 192W

TJ, TSTG: -55 to +150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others,Air

Place of Origin: CHINA

Supply Ability: 100000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: CFR,FOB,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

N-Channel SiC Power MOSFET

P/N: YZPST-M1A080120L1

Features

High Blocking Voltage with Low On-Resistance

High Speed Switching with Low Capacitance

Easy to Parallel and Simple to Drive

Benefits

Higher System Efficiency

Reduced Cooling Requirements

Increased Power Density

Increased System Switching Frequency

Applications

Power Supplies

High Voltage DC/DC Converters

Motor Drives

Switch Mode Power Supplies

Pulsed Power applications

YZPST-M1A080120L1

Part Number	Package
M1A080120 L1	TO-247-4

Maximum Ratings (TC=25℃ unless otherwise specified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDSmax	Drain-Source Voltage	1200	V	VGS=0V, ID=100μA
VGSmax	Gate-Source Voltage	-0.4	V	Absolute maximum values
VGSop	Gate-Source Voltage	-0.25	V	Recommended operational values
ID	Continuous Drain Current	36	A	VGS=20V, Tc=25℃
ID	Continuous Drain Current	24	A	VGS=20V, Tc=100℃
ID(pulse)	Pulsed Drain Current	80	A	Pulse width tp limited by TJmax
PD	Power Dissipation	192	W	Tc=25℃, TJ=150℃
TJ, TSTG	Operating Junction and Storage Temperature	-55 to +150	℃

Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
V(BR)DSS	Drain-Source Breakdown Voltage	1200	/	/	V	VGS=0V, ID=100μA
VGS(th)	Gate Threshold Voltage	2	2.4	4	V	VDS=VGS, ID=5mA	Fig. 11
VGS(th)	Gate Threshold Voltage	/	1.8	/	V	VDS=VGS, ID=5mA, TJ=150℃	Fig. 11
IDSS	Zero Gate Voltage Drain Current	/	1	100	µA	VDS=1200V, VGS=0V
IGSS+	Gate-Source Leakage Current	/	10	250	nA	VDS=0V, VGS=25V
IGSS-	Gate-Source Leakage Current	/	10	250	nA	VDS=0V, VGS=-10V
RDS(on)	Drain-Source On-State Resistance	/	80	98	mΩ	VGS=20V, ID=20A	Fig.
RDS(on)	Drain-Source On-State Resistance	/	140	/	mΩ	VGS=20V, ID=20A, TJ=150℃	4,5,6
Ciss	Input Capacitance	/	1475	/		VGS=0V	Fig.
Coss	Output Capacitance	/	94	/	pF	VDS=1000V	15,16
Crss	Reverse Transfer Capacitance	/	11	/		f=1MHz
Eoss	Coss Stored Energy	/	52	/	µJ	VAC=25mV
EON	Turn-On Switching Energy	/	564	/	µJ	VDS=800V, VGS=-5V/20V
EOFF	Turn-Off Switching Energy	/	260	/	µJ	ID=20A, RG(ext)=2.5Ω, L=200μH
td(on)	Turn-On Delay Time	/	9.3	/
tr	Rise Time	/	9.5	/		VDS=800V, VGS=-5V/20V, ID=20A RG(ext)=2.5Ω, RL=40Ω
td(off)	Turn-Off Delay Time	/	18	/	ns
tf	Fall Time	/	7.6	/
RG(int)	Internal Gate Resistance	/	3.1	/	Ω	f=1MHz, VAC=25mV
QGS	Gate to Source Charge	/	24	/		VDS=800V
QGD	Gate to Drain Charge	/	15	/	nC	VGS=-5V/20V
QG	Total Gate Charge	/	79	/		ID=20A

Reverse Diode Characteristics

Symbol	Parameter	Typ.	Max.	Unit	Test Conditions	Note
VSD	Diode Forward Voltage	3.6	/	V	VGS=-5V, ISD=10A	Fig. 8,9,10
VSD	Diode Forward Voltage	3.3	/	V	VGS=-5V, ISD=10A, TJ=150℃	Fig. 8,9,10
IS	Continuous Diode Forward Current	/	44	A	TC=25℃
trr	Reverse Recover Time	35	/	ns
Qrr	Reverse Recovery Charge	91	/	nC	VR=800V, ISD=20A
Irrm	Peak Reverse Recovery Current	4.5	/	A