Home > Products > Semiconductor Plastic Package > Silicon Transistor > Fast Switching TO-263 7N90A0 Silicon N-Channel Power MOSFET

Contact Supplier

Mr. John chang

Leave a message

Contact Now

Fast Switching TO-263 7N90A0 Silicon N-Channel Power MOSFET

$0.45

2000-19999
Piece/Pieces
$0.35

≥20000
Piece/Pieces

option:

V DSS:900V
ID:7A
PD (TC =25℃):160W
RDS(ON)TYP:1.4Ω
a1 IDM:28A
VGS:±30V

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-7N90A0

Brand: YZPST

Place Of Origin: China

V DSS: 900V

ID: 7A

PD (TC =25℃): 160W

RDS(ON)TYP: 1.4Ω

A1 IDM: 28A

VGS: ±30V

A2 EAS: 700mJ

A1 EAR: 60mJ

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Silicon N-Channel Power MOSFET

P/N: YZPST-7N90A0

General Description：

YZPST-7N90A0 the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard.

Features：

Fast Switching

Low Gate Charge and Rdson

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test

YZPST-7N90A0 TO-263

Applications：

Power switch circuit of adaptor and charger.

Absolute （Tc= 25℃ unless otherwise specified）：

Symbol	Parameter	Rating	Units
V DSS	Drain-to- Source Voltage	900	V
ID	Continuous Drain Current	7	A
	Continuous Drain Current TC = 100 °C	5	A
a1	Pulsed Drain Current	28	A
IDM
VGS	Gate-to-Source Voltage	±30	V
a2	Single Pulse Avalanche Energy	700	mJ
EAS
a1	Avalanche Energy , Repetitive	60	mJ
EAR
a1	Avalanche Current	2.4	A
IAR
dv/dt	Peak Diode Recovery dv/dt	5	V/ns
a3
PD	Power Dissipation	160	W
	Derating Factor above 25 °C	1.28	W/℃
TJ ，Tstg	Operating Junction and Storage	150 ，– 55 to 150	℃
	Temperature Range
TL	MaximumTemperature for Soldering	300	℃

Electrical Characteristics（Tc= 25℃ unless otherwise specified ）：

OFF Characteristics
Symbol	Parameter	Test Conditions	Rating			Units
			Min.	Typ.	Max.
V DSS	Drain to Source Breakdown	VGS =0V, I D =250µA	900	--	--	V
	Voltage
ΔBVDSS/ ΔTJ	Bvdss Temperature Coefficient	ID=250uA, Reference25℃	--	0.8	--	V/℃
		VDS = 900V, VGS = 0V,	--	--	1
IDSS	Drain to Source Leakage Current	Ta = 25℃				µ A
		VDS =720V, VGS = 0V,	--	--	250
		Ta = 125℃
IGSS( F)	Gate to Source Forward Leakage	VGS = +30V	--	--	10	µ A
IGSS(R )	Gate to Source Reverse Leakage	VGS =- 30V	--	--	-10	µ A

ON Characteristics
Symbol	Parameter	Test Conditions	Rating			Units
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
RDS(ON)	Drain-to-Source On- Resistance	VGS =10V, I D =3.0A	--	1.4	1.8	Ω
VGS(TH )	Gate Threshold Voltage	VDS = VGS, I D = 250µA	2.5	--	4.5	V
Pulse width tp ≤380µs,δ≤2%

Dynamic Characteristics
Symbol	Parameter	Test Conditions	Rating			Units
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
gfs	Forward Transconductance	VDS = 15V, I D =3A	--	8	--	S
Ciss	Input Capacitance		--	1460	--
Coss	Output Capacitance	VGS = 0V VDS = 25V	--	130	--	pF
Crss	Reverse Transfer Capacitance	f = 1.0MHz	--	23	--

Resistive Switching Characteristics
Symbol	Parameter	Test Conditions	Rating			Units
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
td(ON)	Turn-on Delay Time		--	22	--
tr	Rise Time	I D =7.0A V DD = 450V	--	45	--
td(OFF )	Turn-Off Delay Time	VGS = 10V RG = 9.1Ω	--	33	--	ns
tf	Fall Time		--	37	--
Qg	Total Gate Charge		--	37	--
Qgs	Gate to Source Charge	I D =7 . 0A V DD =450V	--	8	--	nC
Qgd	Gate to Drain (“ Miller ”)Charge	VGS = 10V	--	14	--