Home > Products > Semiconductor Plastic Package > Silicon Transistor > Silicon PNP Darlington Power Transistor

Contact Supplier

Mr. John chang

Leave a message

Contact Now

Silicon PNP Darlington Power Transistor

$0.72

100-499
Piece/Pieces
$0.55

≥500
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

Shanghai

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-FW26025A

Brand: YZPST

Type: Intrinsic Semiconductor

Application: Radio

Batch Number: 2010+

VCBO: -100V

VCEO: -100V

VEBO: -5V

IC: -20A

Icm: -40A

IB: -0.5A

PC: 160W

TJ: 200℃

Tstg: -65~200℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000000

Certificate: ISO9001-2015,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Silicon PNP Darlington Power Transistor

YZPST-FW26025A

Silicon PNP Darlington Power Transistor

DESCRIPTION

·High DC Current Gain-

: hFE = 5000(Min)@ IC= -2A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -100V(Min)

·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS

·Designed for linear and switching industrial equipment

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

VCEO

Collector-Emitter Voltage

-100

VEBO

Emitter-Base Voltage

-5

Collector Current-Continuous

-20

ICM

Collector Current-Peak

-40

Base Current- Continuous

-0.5

Collector Power Dissipation

@TC=25℃

160

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.09

℃/W

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)*

Collector-Emitter Sustaining Voltage

IC= -100mA, IB= 0

-100

VCE(sat)-1*

Collector-Emitter Saturation Voltage

IC= -10A ,IB= -40mA

-2.0

VCE(sat)-2*

Collector-Emitter Saturation Voltage

IC= -20A ,IB= -200mA

-3.0

VBE(sat)*

Base-Emitter Saturation Voltage

IC= -20A ,IB= -200mA

-4

V BE(on)*

Base-Emitter On Voltage

IC= -10A ; VCE= -3V

-2.8

ICEO

Collector Cutoff current

VCE= -50V, IB= 0

-1

ICEV

Collector Cutoff current(VBE=-1.5V)

VCE= -100V, IB= 0

-0.5

VCE= -100V, IB= 0,Tc=150℃

-5

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-2

hFE-1*

DC Current Gain

IC= -2A ; VCE= -3V

5000

hFE-2*

DC Current Gain

IC= -10A ; VCE= -3V

750

18000

hFE-3*

DC Current Gain

IC= -30A ; VCE= -3V

200

*:Pulse test:Pulse width=300us,duty cycle≤2%

Product Categories : Semiconductor Plastic Package > Silicon Transistor

Download

Hot Products

Home > Products > Semiconductor Plastic Package > Silicon Transistor > Silicon PNP Darlington Power Transistor

Email to this supplier

*Subject:
*To:

Mr. John chang
*Email:
*Message:

Your message must be between 20-8000 characters