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1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L

$39

10-99
Piece/Pieces
$31

≥100
Piece/Pieces

option:

VDSmax：1700V
VGSmax：-10/+25V
VGSop：-5/+20V
ID(pluse)：160A
PD：520W
TJ , Tstg：-55 to 175℃

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-M1A045170L

Brand: YZPST

Place Of Origin: China

VDSmax: 1700V

VGSmax: -10/+25V

VGSop: -5/+20V

ID(pluse): 160A

PD: 520W

TJ , Tstg: -55 to 175℃

TL: 260℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000000

Transportation: Ocean,Land,Express,Others

Supply Ability: 10000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N:YZPST-M1A045170L

Silicon Carbide Power MOSFET

( N Channel Enhancement Mode)

Features

High Speed Switching with Low Capacitances

High Blocking Voltage with Low On-Resistance

Easy to Parallel and Simple to Drive

Resistant to Latch-UP

Halogen Free, RoHS Compliant

Benefits

Higher System Efficiency

Reduced Cooling Requirements

Increased Power Density

Increased System Switching Frequency

Applications

Solar Inverters

Switch Mode Power Supplies

High Voltage DC/DC Converters

Motor Drive

Part Number	Package	Marking
M1A045170L	TO-247-4L	M1A045170L

Maximum Ratings (Tc = 25°C unless otherwise specified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDSmax	Drain-Source Voltage	1700	V	VGS = 0 V, ID = 100 μA
VGSmax	Gate-Source Voltage	-0.4	V	Absolute maximum values
VGSop	Gate-Source Voltage	-0.25	V	Recommended operational values
ID	Continuous Drain Current	85	A	VGS = 20 V, TC = 25˚C
ID	Continuous Drain Current	55	A	VGS = 20 V, TC = 100˚C
ID(pluse)	Pulsed Drain Current	160	A	Pulse width tP limited by Tjmax
PD	Power Dissipation	520	W	TC =25˚C, TJ =150℃
TJ , Tstg	Operating Junction and Storage Temperature	-55 to 175	℃
TL	Solder Temperature	260	℃	1.6mm (0.063 ”) from case for 10s
Md	Mounting Torque	1	Nn	M3 or 6-32 screw

		8.8	lbf-in

Electrical Characteristics (Tc = 25°C unless otherwise specified)

Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
V(BR)DSS	Drain Drain-Source	1700		-	V	VGS = 0 V, ID = 100 μA

	Breakdown Voltage
		2	2.6	4	V	VDS = VGS, ID = 18mA
		2	2.6	4	V	VDS = VGS, ID = 18mA
VGS(th)	Gate threshold Voltage		1.9		V	VDS = VGS, ID = 18mA, TJ =150°C
IDSS	Zero Gate Voltage Drain Current		2	100	μA	VDS = 1700 V, VGS = 0 V
IGSS	Gate Source Leakage			2	uA	VGS = 20 V, VDS = 0 V

	Current
	Drain-Source		34	60	mΩ	VGS = 20 V, ID = 50 A
			34	60		VGS = 20 V, ID = 50 A
RDSON	On-State Resistance		66			VGS = 20 V, ID = 50A, TJ =150°C
gfs	Transconductance		16			VGS = 20 V, ID = 50A
			16			VGS = 20 V, ID = 50A
			19		S	VGS = 20 V, ID = 50A, TJ =150°C
C	Input Capacitance		4078
oss	Output Capacitance		167
rss	Reverse Capacitance		39		pF	VDS =1000V,TJ=25°C,f=1MHz
Eoss	Coss Stored Energy		203		μJ
Eon	Turn on Switching Energy		1.9			VDS = 1200 V, VGS = -5/20 V, ID = 50A, Rg(ext) = 2.5Ω,
Eon	Turn on Switching Energy		1.9
Eoff	Turn off Switching Energy		0.3		mJ	TJ=150°C
tdon	Turn on delay time		21
tdon	Turn on delay time		21
tr	Rise time		46			VDS = 1200 V, VGS = -5/20 V, ID = 50A, Rg(ext)= 2.5Ω
tdoff	Turn off delay time		50
tf	Fall time		19		ns
Rgint	Internal Gate Resistance		2.6			VAC =25mV, f=1MHz
Qgs	Gate to Source Charge		44			VDS = 1200 V, VGS = -5/20 V, ID = 50A
Qgd	Gate to Drain Charge		84
Qg	Total Gate Charge		248		nC

Electrical Characteristics (Tc = 25°C unless otherwise specified)

Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
VSD	Diode Forward Voltage		6.1	-	V	VGS = -5 V, ISD = 25 A
VSD	Diode Forward Voltage		5.2		V	VGS = -5 V, ISD = 25 A,TJ =150°C
I	Continuous Diode Forward Current			75	A	VGS = -5V, Tc=25°C
S	Continuous Diode Forward Current			75	A	VGS = -5V, Tc=25°C
trr	Reverse Recovery Time		126		ns	VR= 1200 V, VGS = -5V, ID = 50A, di/dt=1400A/μS,, TJ =150°C
Qrr	Reverse Recovery Charge		1360		nC
Irrm	Peak Reverse Recovery Current		19		A