Home > Products > Semiconductor Module Devices > Thyristor Module > YZPST-IXFN64N50 500V Power MOSFET manufacturer

YZPST-IXFN64N50 500V Power MOSFET manufacturer

  • $15
    10-199
    Bag/Bags
  • $12
    ≥200
    Bag/Bags
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
10 Bag/Bags
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-IXFN64N50

BrandYZPST

Supply Ability & Additional Information

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Power MOSFET

YZPST-IXFN64N50

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode


YZPST-IXFN64N50-1
Product parameters
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500V 
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V 
Vgs (Max)
±30V

Input Capacitance (Ciss) (Max) @ Vds
8700pF @ 25V

FET Feature
-
Power Dissipation (Max)
700W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC

Features

International standard package

Encapsulating epoxy meets

UL 94V-0, flammability classification

miniBLOC with Aluminium nitride

isolation

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

YZPST-IXFN64N50-2YZPST-IXFN64N50-3






Product Categories : Semiconductor Module Devices > Thyristor Module

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