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Dual thyristor modules 80A for high reliability

$13

10-99
Bag/Bags
$10

≥100
Bag/Bags

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

10 Bag/Bags

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-PWB80A40

Brand: YZPST

Certification: Other

Encapsulation Structure: Ceramic Packaged Transistor

Function: Other

Structure: Other

Material: Other

VDRM/VRRM: 400/400V

ITRMS: 125A

ITSM: 2280A

I2t: 26kA2S

Supply Ability & Additional Information

Productivity: 10000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Dual Thyristor Modules

YZPST-PWB80A40

Features

Heat transfer through aluminium nitride ceramic isolated metal baseplate

Precious metal pressure contacts for high reliability

Thyristor with amplifying gate

Typical Applications

· DC motor control

· AC motor soft starters

· Temperature control

· Professional light dimming

Maximum Ratings

Symbol

Condition

Ratings

Unit

I_T(AV)

Single phase，half wave，85° conduction

80

A

I_TRMS

Single phase，half wave，35° conduction

125

A

I_TSM

T_j=125℃

2280

A

I²t

T_j=125℃

26

kA²S

V_DRM/V_RRM

400/400

V

di/dt

non-repetitive

50

A/us

V_iso

A.C.1minute

3000

V

T_j

-30 ~ + 125

℃

T_stg

-30 ~ + 125

℃

W

-

g

Electrical Characteristics

Symbol

Condition

Ratings

Unit

I_DRM /I_RRM

AtV_DRM，Single phase，half wave，T_j=125℃

12

mA

V_TM

On-State Current 240A，T_j=25℃

1.2

V

V_T(TO)

T_j=125℃

-

V

t_gd

T_j=25℃

10

us

t_q

T_j=125℃

-

us

I_GT/V_GT

T_j=25℃

150 / 2

mA/V

V_GD

V_D=67%V_DRM , T_j=125℃

0.25

V

DV/DT

V_D=67%V_DRM

50

V/us

I_H

T_j=25℃

100

mA

I_L

T_j=25℃

-

mA

R_th(j-c)

Per Module

-

K/W

Product Categories : Semiconductor Module Devices > Thyristor Module

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Symbol	Condition	Ratings	Unit
I_T(AV)	Single phase，half wave，85° conduction	80	A
I_TRMS	Single phase，half wave，35° conduction	125	A
I_TSM	T_j=125℃	2280	A
I²t	T_j=125℃	26	kA²S
V_DRM/V_RRM		400/400	V
di/dt	non-repetitive	50	A/us
V_iso	A.C.1minute	3000	V
T_j		-30 ~ + 125	℃
T_stg		-30 ~ + 125	℃
W		-	g