Home > Products > Semiconductor Disc Devices(Capsule Type) > Welding Diode > High power diode for medium frequency welding

High power diode for medium frequency welding

  • $150
    ≥10
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
10 Piece/Pieces
Transportation:
Ocean,Air
Port:
Shanghai
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  • Product Description
Overview
Product Attributes

Model No.YZPST-53DN04

BrandYZPST

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability1000

CertificateISO9001-2015,ROHS

HS Code85411000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box

HIGH Power Diode FOR MEDIUM FREQUENCY WELDING 

WITHOUT HOUSING ULTRATHIN DEVICE

YZPST-53DN04

Features

- High current capability

- Very low thermal impedance

- High  power cycling capability

ELECTRICAL CHARACTERISTICS AND RATINGS

1

VRRM = Repetitive peak reverse voltage

VRSM = Non repetitive peak reverse voltage (2)

Notes:

All ratings are specified for Tj=25 °C unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60Hz sinusoidal waveform

over the temperature  range  -40 to +180 °C.

(2) 10 ms max. pulse width

(3) Maximum value for Tj = 180 °C

2

Conducting

Parameter

Symbol

Min

Max

Typ

Unit

Conditions

Average value of forward current

IF(AV)

6300

A

50Hz sinewave,180o conduction, Tc = 126 °C

RMS value of forward current

IF(RMS)

9890

A

Peak one cycle surge

(non repetitive) current

IFSM

70

kA

50Hz sinewave,180o conduction, Tj = Tjmax, VR = 0

I square t

I2 t

24500

kA2s

Tj = Tjmax

Peak forward voltage

VFM

1.14

V

Forward current 10 kA, Tjmax

Threshold voltage

VF(TO)

0.7

V

Tj = Tjmax

Forward slope resistance

rF

0.046

m

Tj = Tjmax

Thermal and mechanical characteristics and ratings

Parameter

Symbol

Min

Max

Typ

Unit

Conditions

Operating temperature

Tj

-40

180

°C

Storage temperature

Tstg

-40

180

°C

Thermal resistance junction to case

Rth(j-c)

0.0048

°C/W

Double side cooled , DC

Thermal resistance junction to case

Rth(j-c)

0.0062

°C/W

Double side cooled, 180° sin

Thermal resistance case to sink

Rth(c-s)

0.0025

°C/W

Double side cooled, mounting surfaces smooth, flat and greased

Mounting force

F

40

60

kN

Weight

W

100

g

3


Analytical expression for  Zth(j-c)

Zth(j-c) ( t ) =   i   Ai · ( 1 - exp ( - t /  i ) )

i

1

2

3

Ai

1.0E-03

3.7E-03

1.7E-06

C/W]

i

2.0E-03

3.8E-02

8.0E-01

[s]

Output current (ID) capability for center tap configuration


4

56


  OUTLINE AND DIMENSIONS

7

Notice

- We recommend  to protect the diode with a temperature  resistant O-Ring.

- All the characteristics  given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink surfaces  with flatness < 0.03 mm and roughness < 2µm





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