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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > YZPST brand BT131 Series 1A Triacs SOT-223
YZPST brand BT131 Series 1A Triacs SOT-223
  • YZPST brand BT131 Series 1A Triacs SOT-223
  • YZPST brand BT131 Series 1A Triacs SOT-223
  • YZPST brand BT131 Series 1A Triacs SOT-223
  • YZPST brand BT131 Series 1A Triacs SOT-223
  • YZPST brand BT131 Series 1A Triacs SOT-223
  • YZPST brand BT131 Series 1A Triacs SOT-223

YZPST brand BT131 Series 1A Triacs SOT-223

  • $0.04
    10000-99999
    Piece/Pieces
  • $0.03
    ≥100000
    Piece/Pieces
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Overview
Product Attributes

Model No.: YZPST-BT131

Brand: YZPST

VTM: ≤1.5v

Tstg: -40~150℃

Tj: -40~125℃

ITSM: 16a

I2t: 1.28a2s

Application: Not Applicable

Supply Type: Other

Reference Materials: Other, Photo, Datasheet

Package Type: Surface Mount

Installation Method: Not Applicable

FET Function: Not Applicable

Configuration: Not Applicable

IT(RMS): 1A

VDRM/VRRM: 600/800V

Supply Ability & Additional Information

Productivity: 10000000000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000000000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Picture Example:


BT131 Series 1A Triacs SOT-223

DESCRIPTION:

With low holding and latching current, BT131 Series triacs are especially recommended for use on middle and small resistance type power load.

YZPST-BT131-1



MAIN FEATURES:

symbol

value

unit

IT(RMS)

1

A

VDRM/VRRM

600/800

V

VTM

≤1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

℃

Operating junction temperature range

Tj

-40~125

℃

Repetitive peak off-state voltage (Tj=25℃)

VDRM

600/800

V

Repetitive peak reverse voltage (Tj=25℃)

VRRM

600/800

V

RMS on-state current

IT(RMS)

1

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

 

ITSM

 

16

 

A

I2t value for fusing (tp=10ms)

I2t

1.28

A2s

Critical rate of rise of on-state current (IG=2×IGT)

 

dI/dt

Ⅰ-Ⅱ-Ⅲ

50

 

A/μs

Ⅳ

10

Peak gate current

IGM

2

A

Average gate power dissipation

PG(AV)

0.5

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

 

Parameter

 

Test Condition

 

Quadrant

 

Value

 

Unit

T

D

 

IGT

 

 

VD=12V, RL=33Ω

Ⅰ-Ⅱ-Ⅲ

 

 

MAX

3

5

mA

Ⅳ

5

10

 

VGT

Ⅰ-Ⅱ-Ⅲ-Ⅳ

1.3

V

VGD

VD=VDRM

Ⅰ-Ⅱ-Ⅲ-Ⅳ

MIN

0.2

V

IH

IT=100mA

MAX

5

7

mA

 

IL

 

IG=1.2IGT

Ⅰ-Ⅲ-Ⅳ

 

MAX

5

5

 

mA

Ⅱ

10

20

dV/dt

VD=0.66×VDRM Tj=125℃ Gate open

MIN

20

50

V/µs

STATIC CHARACTERISTICS

Symbol

Test Condition

Value

Unit

VTM

ITM=1.4A tp=380μs

Tj=25℃

MAX

1.5

V

IDRM IRRM

 

VDRM= VRRM

Tj=25℃

 

MAX

5

µA

Tj=125℃

0.5

mA

THERMAL RESISTANCES

Symbol

Test Condition

Value

Unit

 

Rth(j-c)

 

junction to case(AC)

TO-92

60

℃/W

SOT-89/SOT-223 SOT-223-2L

31

℃/W

PACKAGE MECHANICAL DATA

YZPST-BT131-2




Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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