High Power Fast Recovery Diode

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-SD233N/R

Brand: YZPST

Supply Ability & Additional Information

Productivity: 100

Transportation: Ocean,Air

Place of Origin: CHINA

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

HS Code: 85411000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

High Power FAST Recovery Diode

FAST RECOVERY DIODES, Stud Version

Features: High power FAST recovery diode series, 1.0 to 2.0 μs recovery time, High voltage ratings up to 5000V, High current capability, Optimized turn on and turn off characteristics, Low forward recovery, Fast and soft reverse recover, Compression bonded encapsulation, Stud version B-8, Maximum junction temperature 125°C

Typical Applications: Snubber diode for GTO, Fast recovery, rectifier applications

High Power FAST Recovery Diode YZPST-SD233NR (1)

High Power FAST Recovery Diode

Forward Conduction

Parameters	PSTSD233N/R	Units	Conditions
IF(AV Max. average forward current @ Case temperature	250	A	180° conduction, half sine wave
IF(AV Max. average forward current @ Case temperature	60	°C	180° conduction, half sine wave
IF(RMX) Max. RMS forward current	390	A
IFSM Max. peak, one-cycle forward non-repetitive surge current	5500	A	t = 10ms	No voltage reapplied	Initial TJ =TJmax.
	5760	A	t = 8.3ms	No voltage reapplied
I2t Maximum I2t for fusing	150000	A2s	t = 10ms	No voltage reapplied
I2t Maximum I2t for fusing	140000	A2s	t = 8.3ms	No voltage reapplied
I2√t Maximum I2√t for fusing	1500000	KA2√s	I2t for time tx = I2√t x √tx ; 0.1 ≤ tx ≤ 10ms, VRRM = 0V
VFM Maximum forward voltage drop	3.0	V	TJ = 25 oC, IFM = 1200 (arm)
IRRM Max. DC reverse current	10.0	μA	TJ = 25 oC, per diode at VRRM
Trr	5	μs