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DO5 1800V Fast Recovery Diode STUD

Name: YZPST-ZPK20A-1800V STUD DIODES
Uploaded: 2024-09-04T09:07:57+08:00
Description: YZPST-ZPK20A-1800V

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Overview

Product Attributes

Model No.: YZPST-ZPK20A-1800V

Brand: YZPST

Place Of Origin: China

VRRM: 1800V

VRSM: 1900V

IF(AV): 20A

IF(RMS): 38A

IFSM: 240A

I2t: 400A2s

VF: 1.95V

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Fast Recovery Diode STUD

Type: YZPST-ZPK20A/1800V

Forward Conduction

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Repetitive peak reverse voltage	VRRM			1800	V	Tc=125oC
Non repetitive peak reverse voltage	VRSM			1900	V	Tc=125oC
Max. average forward current	IF(AV)			20	A	Sinewave,180o
Max. average forward current	IF(AV)			20	A	conduction,Tc=120oC
Max. RMS forward current	IF(RMS)			38	A	Nominal value
Max. peak, one-cycle forward, non-repetitive surge current	IFSM			240	A	10.0 msec (50Hz), half sinewave, Tj = Tj MAX
Maximum I2tfor fusing	I2t			400	A2s	10.0 msec (50Hz), half sinewave, Tj = Tj MAX
Max. forward voltage drop	VF			1.95	V	IF = 60A; Tj = 25oC
Threshold voltage	VF0			1.08	V	Tj = Tj MAX
Slope resistance	rt			6.33	mΩ	Tj = Tj MAX

Thermal and Mechanical Specifications

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Repetitive peak reverse leakage and off state	IRRM		10		mA
Operating temperature	Tj	-40	125		oC
Storage temperature	Tstg	-40	150		oC
Maximum Reverse Recovery Time	Trr		1500		ns	IF=70A,tp=170us
Reverse recovery charge	Qrr			-	μc
Thermal resistance - junction to case	RΘ (j-c)		0.6	-	K/W
Thermal resistamce - case to heatsink	RΘ (c-s)		0.25	-	oC/W
Mounting force	P			2.2	Nm	± 20%
Weight	W	-	-	-	g	About
Case style				-		See Outline Table