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TO220 NPN Type Transistor 2SC2073

$0.12

2000-9999
Piece/Pieces
$0.08

≥10000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-2SC2073

Brand: YZPST

VCBO: 150V

VCEO: 150V

VEBO: 5V

IC: 1.5A

PTOT: 75W

Tj: 150℃

Tstg: -55-+150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 10000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 100000

Certificate: ISO9001-2015,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

NPN Type Transistor 2SC2073

DESRCRIPTION:
The 2SC2073 is a NPN type transistor, used as a power switch tube for electronic ballasts and electronic energy-saving lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, low reverse leakage, etc.

ABSOLUTE MAX I MUM RATINGS

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	150	V
VCEO	Collector-Emitter Voltage	150	V
VEBO	Emitter-Base Voltage	5	V
IC	Continuous Collector Current	1.5	A
PTOT	Total dissipation at Tcase=25 ℃	75	W
T_j	Junction Temperature	150	℃
T_stg	Storage Temperature Range	-55-150	℃

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol	Parameter	Test Condition	Value			Unit
Symbol	Parameter	Test Condition	Min	Type	Max	Unit
V(BR)CBO	Collector-Base Breakdown Voltage	I_C=1mA	150			V
V(BR)CEO	Collector-Emitter Breakdown Voltage	I_C=0.1mA	150			V
V(BR)EBO	Emitter-Base Breakdown Voltage	I_E=1mA	-5			V
ICBO	Collector Cutoff Current	V_CB=150V, I_E=0			5	μA
ICEO	Collector Cutoff Current	V_CE=150V, I_C=0			5	μA
IEBO	Emitter Cutoff Current	V_EB=5V, I_C=0			5	μA
hFE	DC Current Gain	V_CE=10V, I_C=0.5A	40		140
VCE(sat)	Collector-Base Breakdown Voltage	I_C=0.5A, I_B=50mA			0.85	V
VBE(sat)	Base-Emitter Saturation Voltage	I_C=0.5A, I_B=50mA			1.5	V
a: tp≤300μs,δ≤2%