Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High dv/dt rate TO-92 MCR100-6 Series 0.8A Sensitive SCRs
  • High dv/dt rate TO-92 MCR100-6 Series 0.8A Sensitive SCRs
  • High dv/dt rate TO-92 MCR100-6 Series 0.8A Sensitive SCRs
  • High dv/dt rate TO-92 MCR100-6 Series 0.8A Sensitive SCRs
  • High dv/dt rate TO-92 MCR100-6 Series 0.8A Sensitive SCRs
  • High dv/dt rate TO-92 MCR100-6 Series 0.8A Sensitive SCRs

High dv/dt rate TO-92 MCR100-6 Series 0.8A Sensitive SCRs

  • $0.021
    1000-9999
    Piece/Pieces
  • $0.018
    ≥10000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-MCR100-6

BrandYZPST

Place Of OriginChina

IT(RMS)1A

VDRM/VRRM400/600V

VTM≤1.5V

Tstg-40~150℃

Tj-40~110℃

ITSM08A

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
P/N: YZPST-MCR100-6
MCR100-6 Series 0.8A Sensitive SCRs
DESCRIPTION:
The MCR100-6 SCR series provide high dv/dt rate
with strong resistance to electromagnetic interface.
They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.
 

MAIN FEATURES:

symbol

value

unit

IT(RMS)

1

A

VDRM/VRRM

400/600

V

VTM

≤1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~110

Repetitive peak off-state voltage (Tj=25)

VDRM

400/600

V

Repetitive peak reverse voltage (Tj=25)

VRRM

400/600

V

RMS on-state current

IT(RMS)

0.8

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

ITSM

8

A

I2t value for fusing (tp=10ms)

I2t

0.32

A2s

Critical rate of rise of on-state current (IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

0.2

A

Average gate power dissipation

PG(AV)

0.1

W

Peak gate power

PGM

0.5

W

ELECTRICAL CHARACTERISTICS (Tj=25℃  unless otherwise specified)

 

Symbol

 

Test Condition

Value

 

Unit

MIN

TYPE

MAX

IGT

 

VD=12V, RL=33Ω

-

20

200

µA

VGT

-

0.6

0.8

V

 

VGD

VD=VDRM Tj=110 RL=3.3kΩ

 

0.2

 

-

 

-

 

V

IH

IT=50mA

-

-

5

mA

IL

IG=1.2IGT

-

-

6

mA

dV/dt

VD=0.66×VDRM   Tj=110 G open RGK=1KΩ

 

10

 

-

 

-

V/ µs



PACKAGE MECHANICAL DATA

MCR100-6 TO-92

 

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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