Rf power transistor TO-3 npn silicon transistor

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

15

A

Base Current

IB

0.5

A

Total Dissipation at

Ptot

120

W

Max. Operating Junction Temperature

Tj

120

oC

Storage Temperature

Tstg

-55~150

oC

Parameter

Symbol

Test  Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

ICEO

VCE = 60V, IB = 0

-

-

1.0

mA

Collector Cut-off Current

ICBO

VCB = 60V, IE = 0

-

-

0.5

mA

Emitter Cut-off Current

IEBO

VEB = 5.0V, IC = 0

-

-

2.0

mA

Collector-Emitter Sustaining Voltage

VCEO

IC = 30mA, IB = 0

60

-

-

V

DC Current Gain

hFE(1)

VCE = 3.0V, IC = 4.0A

2000

-

-

hFE(2)

VCE = 3.0V, IC = 10A

500

-

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 10A, IB = 100mA

-

-

2.5

V

IC = 15A, IB = 150mA

-

-

4.0

Base-Emitter Saturation Voltage

VBE(sat)

IC = 10A, IB = 100mA

-

-

3.5

V