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High transition frequency BFR93A Plastic-Encapsulate Transistors

$0.035

1000-9999
Piece/Pieces
$0.023

≥10000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1000 Piece/Pieces

Transportation:

Ocean,Air

Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BFR93A

Brand: YZPST

Manufacturing Technology: Optoelectronic Semiconductor

Material: Element Semiconductor

Type: Intrinsic Semiconductor

Package: SMD

Signal Processing: Simulation

Application: Refrigerator

Model: ST

Batch Number: 2010+

VCBO: 20V

VCEO: 11V

VEBO: 3V

IC: 50mA

PC: 0.2W

TJ: 150℃

Tstg: -55~+150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000000

Certificate: ISO9001-2015,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

High transition frequency BFR93A Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors

YZPST-BFR93A

Features

1. High transition frequency.(Typ.fT=1.5GHz)

2.Small rbb`Cc and high gain.(Typ.4ps)

3. Small NF.

4. We declare that the material of product compliance with RoHS requirements.

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	20	V
Collector-Emitter Voltage	VCEO	11	V
Emitter-base voltage	VEBO	3	V
Collector Current	IC	50	mA
Collector power dissipation	PC	0.2	W
Junction temperature	Tj	150	°C
Storage temperature	Tstg	-55~+150	°C

ELECTRICAL CHARACTERISTICS(TA = 25°C)

Parameter	Symbol	Min.	Typ	Max.	Unit	Conditions
Collector-base breakdown voltage	BVCBO	20	-	-	V	IC=10mA
Collector-emitter breakdown voltage	BVCEO	11	-	-	V	IC=1mA
Emitter-base breakdown voltage	BVEBO	3	-	-	V	IE=10mA
Collector cutoff current	ICBO	-	-	0.5	mA	VCB=10V
Emitter cutoff current	IEBO	-	-	0.5	mA	VEB=2V
Collector-emitter saturation voltage	VCE(sat)	-	-	0.5	V	IC/IB=10mA/5mA
DC current transfer ratio	hFE	56	-	120	-	VCE/IC=10V/5mA
Transition frequency	fT	1.4	3.2	-	GHz	VCE=10V, IE=-10mA, f=500MHz
Output capacitance	Cob	-	0.8	1.5	pF	VCB=10V, IE=0A, f=1MHz
Collector-base time constant	rbb`Cc	-	4	12	ps	VCB=10V, IC=10mA, f=31.8MHz
Noise factor	NF	-	3.5	-	dB	VCE=6V, IC=2mA, f=500MHz,Rg=50W