Home > Products > Semiconductor Plastic Package > Silicon Transistor > TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16

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TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16

$0.03

10000-99999
Piece/Pieces
$0.02

≥100000
Piece/Pieces

option:

VCBO：-80V
VCEO：-80V
VEBO：-5V
IC：-1.5A
IB：-0.5A
Ptot：12.5W

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BD140-16

Brand: YZPST

Application: Microphone, Not Applicable

Supply Type: Original Manufacturer, Odm, Other

Reference Materials: Datasheet, Photo, Other

Package Type: Surface Mount

Installation Method: Through Hole, Not Applicable

FET Function: Not Applicable

Configuration: Not Applicable

VCBO: -80V

VCEO: -80V

VEBO: -5V

IC: -1.5A

IB: -0.5A

Ptot: 12.5W

Tj: 150℃

Tstg: -55~150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Others

Place of Origin: CHINA

Supply Ability: 100000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

PNP SILICON TRANSISTOR

YZPST-BD140-16

TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16

DESCRIPTION

The BD140-16 is silicon epitaxial planar PNP transistors

in Jedec TO-126 plastic package, designed for audio

amplifiers and drivers utilizing complementary or quasi

compementary circuits.

The complementary NPN types are the BD139-16

Yzpst Bd140 16 Jpg

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	-80	V
Collector-Emitter Voltage	VCEO	-80	V
Emitter-Base Voltage	VEBO	-5.0	V
Collector Current	IC	-1.5	A
Base Current	IB	-0.5	A
Total Dissipation at	Ptot	12.5	W
Max. Operating Junction Temperature	Tj	150	oC
Storage Temperature	Tstg	-55~150	oC

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Collector Cut-off Current	ICBO	VCB = -80V, IE = 0			-10	μA
Collector Cut-off Current	ICBO	VCB = -80V, IE = 0	—	—	-10	μA
Emitter Cut-off Current	IEBO
Emitter Cut-off Current	IEBO	VEB = -5.0V, IC = 0			-10	μA
	VCEO
Collector-Emitter Sustaining Voltage	VCEO	IC = -1.0mA, IB = 0	-80	—	—	V
		VCE = -2.0V, IC = -0.15A	100		250
DC Current Gain	hFE
		VCE = -2.0V, IC = -0.5A	100	—	—
	VCE(sat)
Collector-Emitter Saturation Voltage	VCE(sat)	IC = -0.5A, IB = -0.05A			-0.5	V
	VBE
Base-Emitter Voltage	VBE	IC = -0.5A, VCE = -2.0V			-1	V
	fT
Transition Frequency	fT	VCE = -5.0V,IC = -50mA	80			MHz

Product Categories : Semiconductor Plastic Package > Silicon Transistor

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Home > Products > Semiconductor Plastic Package > Silicon Transistor > TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16

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