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Hot selling 1200V single thyristor modules

$28

10-99
Bag/Bags
$21

≥100
Bag/Bags

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

10 Bag/Bags

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-MT(R)250A1200V

Brand: YZPST

shape: Other

Application: Other

Conductive Type: Other

Technics: Other

V(DRM): 1200V

V(RRM): 1200V

V(RSM): 1300V

I(RRM): 85mA

T(j): -40~+125℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Transportation: Ocean,Air

Place of Origin: CHINA

Supply Ability: 5000

Certificate: ISO9001-2008,ROHS

HS Code: 85044409190

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Bag/Bags

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Single Thyristor Modules

YZPST-MT(R)250A1200V

Features

· Industrial standard package

· Electrically insulated base plate

· Heat transfer through aluminium oxide ceramic insulated metal base plate

· Chip soldered on direct copper bonded AL₂O₃ ceramic

· Thyristor chip with center gate

Typical Applications

· DC motor control

· AC motor soft starters

· Temperature control

· Professional light dimming

V_DRM/V_RRM		1200/1200	V
V_RSM		1300	V

Maximum Ratings

Symbol	Condition	Ratings	Unit
I_T(AV)	sin. 180; T_c =85°C,	250	A
I_TSM	T_vj=25°C; 10 ms	9500	A
I²t	T_vj=25°C; 8,3…10 ms	450	kA²S
(di/dt)_cr		130	A/us
V_iso	A.C. 1s / 1min.		V
T_j		-40 ~ + 125	°C
T_stg		-40 ~ + 125	°C
W		-	g

Electrical Characteristics

Symbol	Condition	Ratings	Unit
I_DRM /I_RRM	AtV_DRM, T_j=125°C	85	mA
V_T	On-State Current 750A, T_j=25°C	1.43	V
V_T(TO)	T_j=125°C	0.81	V
t_gd	T_j=25°C	1	us
t_q	T_j=125°C	150	us
I_GT/V_GT	T_j=25°C	145 / 2	mA/V
V_GD	T_j=125°C	0.25	V
(dv/dt)_cr	T_j=125°C	1000	V/us
I_H	T_j=25°C, typ. / max.	140/450	mA
I_L	T_j=25°C, typ. / max.	200/1800	mA
R_th(j-c)	Per Module	0.0455	K/W