Home > Products > Semiconductor Disc Devices(Capsule Type) > Welding Diode > High current density welding diode ZP18000

High current density welding diode ZP18000

  • $55
    ≥10
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
10 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-ZP18000-02

BrandYZPST

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability500

CertificateISO9001-2015,ROHS

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Welding diodes  

YZPST-ZP18000-02

Features:

All Diffused Structure

. High current density

. Very low on-state voltage drop

. metal case with ceramic insulator

. Ultra-low thermal resistance

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

1

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) Half sine, f=50Hz, Tj = -40 to +170oC.

(2) Half sine, 10 msec,Tj = -40 to +170oC.

(3) Maximum junction temperature:Tj = 170 oC.

(4) Parameters are defined below :

2


Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IF(AV)

18000

A

sine,180o Conduction angle,Tc =85oC

RMS value of on-state current

IF(RMS)

28200

A

Peak one cycle surge

(non repetitive) current

IFSM

135000

A

10.0 msec ,sine, 180o Conduction angle, Tj = 170 oC

I2t

I2t

91100000

A2s

10.0 msec, sine, Tj = 170 oC

Peak on-state voltage

VFM

1.08

0.97

V

IFM =12000 A; 25 oC IFM =5000 A; 25 oC

Threshold votage

VTO

0.74

V

Tj = 170 oC

Slope resistance

rT

0.016

mΩ

Tj = 170 oC

Reverse Recovery Current (4)

IRM(REC)

A

IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax

Reverse Recovery Charge (4)

Qrr

mC

IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax

Reverse Recovery Time (4)

tRR

ms

THERMAL AND MECHANICAL CHARACTERISTICS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating junction temperature range

Tj

-40

+170

oC

Storage temperature

Tstg

-40

+170

oC

Thermal resistance - junction to case

RQ (j-c)

0.004

o

C/W

Double sided cooled

Thermal resistance - case to sink

RQ (j-c)

0.008

o

C/W

Single sided cooled

Creepage distance on the surface

DS

8

mm

Air breakdown distance

Da

8

mm

Mounting force

F

36

44

kN

Weight

W

578

g

CASE OUTLINE AND DIMENSIONS

3







Product Categories : Semiconductor Disc Devices(Capsule Type) > Welding Diode

Home > Products > Semiconductor Disc Devices(Capsule Type) > Welding Diode > High current density welding diode ZP18000
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