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ZP18000A 400V ceramic insulator welding diode

$55

≥10
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

10 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-ZP18000-04

Brand: YZPST

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2015,ROHS

HS Code: 85411000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Welding diodes

YZPST-ZP18000-04

Features:

All Diffused Structure

. High current density

. Very low on-state voltage drop

. metal case with ceramic insulator

. Ultra-low thermal resistance

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) Half sine, f=50Hz, Tj = -40 to +170oC.

(2) Half sine, 10 msec,Tj = -40 to +170oC.

(3) Maximum junction temperature:Tj = 170 oC.

(4) Parameters are defined below :

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IF(AV)

18000

A

sine,180o Conduction angle,Tc =85oC

RMS value of on-state current

IF(RMS)

28200

A

Peak one cycle surge

(non repetitive) current

IFSM

135000

A

10.0 msec ,sine, 180o Conduction angle, Tj = 170 oC

I2t

I2t

91100000

A2s

10.0 msec, sine, Tj = 170 oC

Peak on-state voltage

VFM

1.08

0.97

V

IFM =12000 A; 25 oC IFM =5000 A; 25 oC

Threshold votage

VTO

0.74

V

Tj = 170 oC

Slope resistance

rT

0.016

mΩ

Tj = 170 oC

Reverse Recovery Current (4)

IRM(REC)

A

IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax

Reverse Recovery Charge (4)

Qrr

mC

IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax

Reverse Recovery Time (4)

tRR

ms

THERMAL AND MECHANICAL CHARACTERISTICS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating junction temperature range

Tj

-40

+170

oC

Storage temperature

Tstg

-40

+170

oC

Thermal resistance - junction to case

RQ (j-c)

0.004

o

C/W

Double sided cooled

Thermal resistance - case to sink

RQ (j-c)

0.008

o

C/W

Single sided cooled

Creepage distance on the surface

DS

8

mm

Air breakdown distance

Da

8

mm

Mounting force

F

36

44

kN

Weight

W

578

g

CASE OUTLINE AND DIMENSIONS

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Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	IF(AV)		18000		A	sine,180o Conduction angle,Tc =85oC
RMS value of on-state current	IF(RMS)		28200		A
Peak one cycle surge (non repetitive) current	IFSM		135000		A	10.0 msec ,sine, 180o Conduction angle, Tj = 170 oC
I2t	I2t		91100000		A2s	10.0 msec, sine, Tj = 170 oC
Peak on-state voltage	VFM		1.08 0.97		V	IFM =12000 A; 25 oC IFM =5000 A; 25 oC
Threshold votage	VTO		0.74		V	Tj = 170 oC
Slope resistance	rT		0.016		mΩ	Tj = 170 oC
Reverse Recovery Current (4)	IRM(REC)				A	IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax
Reverse Recovery Charge (4)	Qrr				mC	IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax
Reverse Recovery Time (4)	tRR				ms