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1500V N-Channel Power MOSFET

  • $2.15
    100-999
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  • $1.85
    ≥1000
    Piece/Pieces
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Incoterm:
FOB,CFR,CIF
Min. Order:
1 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-FM3N150C

BrandYZPST

Place Of OriginChina

Vdss1500V

ID Continuous (Tc = 25 °C )1.8A

ID Continuous ( Tc = 100 °C )1.2A

Idm12A

Vgss±30V

EAS225mJ

Dv/dt5V/ns

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

1500V N-Channel MOSFET

YZPST-FM3N150C

General Description

This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices can be used in various power switching circuit for system miniaturization and higher efficiency.

Features

3A, 1500V, RDS(on)typ. = 5Q@VGS = 10 V ld=1.5A

Low gate charge (typical9.3nC)

Low gate charge (typical2.4pf)

Fast switching

100% avalanche tested

YZPST-FM3N150C-1.jpg

 

Absolute Maximum Ratings Tc = 25 °C unless otherwise noted

Symbol Parameter JFFM3N150C Units
Vdss Drain - Source Voltage 1500 V
Id Drain Current Continuous (Tc = 25 °C ) 1.8 A
Continuous ( Tc = 100 °C ) 1.2 A
Idm Drain Current - Pulsed ( Note 1) 12 A
Vgss Gate - Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy ( Note 2 ) 225 mJ
dv/dt Peak Diode Recovery dv/dt ( Note 3 ) 5 V/ns
Pd Power Dissipation (Tc = 25 °C ) 30 W
Tj,Tstg Operating and Storage Temperature Range -55 to +150 °C
Tl Maximum lead temperature for soldering purposes 300 °C
1/8 frome case for 5 seconds

 

 

Thermal characteristics

Symbol Parameter JFFM3N150C Units
Raic Thermal Resistance, Junction-to-Case 4.1 °C/W
Rqja Thermal Resistance, Junction-to-Ambient 62.5 °c/w

Electrical Characteristics tc=25 °c unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVdss Drain - Source Breakdown Voltage Vgs = 0 V, Id =250 uA 1500     V
/ BVdss/ Breakdown Voltage Temperature Coefficient Id = 250 uA, Referenced to -- 1.3 -- v/°c
Tj 25 °C
  Zero Gate Voltage Drain Current Vds = 1500 V, Vgs = 0 V     25 uA
Idss Vds = 1200 V, Tc = 125 °C -- -- 500 uA
Igssf Gate-Body Leakage Current, Forward Vgs = 30 V, Vgs = 0 V 100 nA
Igssr Gate-Body Leakage Current, Reverse Vgs = -30 V, Vgs = 0 V -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage Vds = Vgs, Id = 250 uA 3 5 V
RDS(on) Static Drain-Source on-Resista nee Vgs = 10 V, Id= 1.5A 5 8 Q
gFS Forward Transconductance Vds = 30 V, Id= 1.5 A ( Note -- 4.5 -- S
4)
Dynamic Characteristics
Ciss Input Capacitance Vds = 25 V, Vgs = 0 V, f = 1938 pF
Coss Output Capacitance 1.0 MHz 104 pF
Crss Reverse Transfer Capacitance   2.4 pF
Rg Gate resistance F= 1.0 MHz   3.5   Q
Switching Characteristics
td(on) Turn-On Delay Time     34   ns
tr Turn-On Rise Time Vds = 750 V, Id=3.0A/ Rg =   17   ns
td(off) Turn-Off Delay Time 100 , Vgs = 10 V (Note 4,5)   56   ns
tf Turn-Off Fall Time     27   ns
Qe Total Gate Charge Vds = 750 V, Id =3.0 A Vgs =   9.3   nC
Qgs Gate-Source Charge 10 V (Note 4,5)   15   nC
Qgd Gate-Drain Charge     5.3   nC
Drain - Source Diode Characteristics and Maximum Ratings
Is Maximum Continuous Drain-Source Diode Forward Current     3 A
Ism Maximum Pulsed Drain-Source Diode Forward Current     12 A
Vsd Drain-Source Diode Forward Voltage Vgs = 0 V, Is = 3.0 A     1.5 V
trr Reverse Recovery Time Vgs = 0 V, Is = 3.0 A   302   ns
Qrr Reverse Recovery Charge dlF/dt = 100 A/us ( Note -- 10 -- uC
4)

 

 

 

Notes:

1. Repetitive Rating : Pulsed width limited by maximum junction temperature

2. L= lO.OmH , Ias = 6.7A, Rg = 25Q, StartingTj = 25°C

3. Isd < 3.0Az di/dt < lOOA/us, Vdd < BVdss, Starting Tj = 25°C

4. Pulsed Test: Pulsed width <3OOusz Duty cycle < 2%

5. Essentially independent of operating temperature


YZPST-M2G0080120D MOSFET


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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