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1500V N-Channel Power MOSFET

$2.15

100-999
Piece/Pieces
$1.85

≥1000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-FM3N150C

Brand: YZPST

Place Of Origin: China

Vdss: 1500V

ID Continuous (Tc = 25 °C ): 1.8A

ID Continuous ( Tc = 100 °C ): 1.2A

Idm: 12A

Vgss: ±30V

EAS: 225mJ

Dv/dt: 5V/ns

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

1500V N-Channel MOSFET

YZPST-FM3N150C

General Description

This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices can be used in various power switching circuit for system miniaturization and higher efficiency.

Features

3A, 1500V, RDS(on)typ. = 5Q@VGS = 10 V ld=1.5A

Low gate charge (typical9.3nC)

Low gate charge (typical2.4pf)

Fast switching

100% avalanche tested

Absolute Maximum Ratings Tc = 25 °C unless otherwise noted

Symbol	Parameter		JFFM3N150C	Units
Vdss	Drain - Source Voltage		1500	V
Id	Drain Current	Continuous (Tc = 25 °C )	1.8	A
		Continuous ( Tc = 100 °C )	1.2	A
Idm	Drain Current - Pulsed ( Note 1)		12	A
Vgss	Gate - Source Voltage		±30	V
EAS	Single Pulsed Avalanche Energy ( Note 2 )		225	mJ
dv/dt	Peak Diode Recovery dv/dt ( Note 3 )		5	V/ns
Pd	Power Dissipation (Tc = 25 °C )		30	W
Tj,Tstg	Operating and Storage Temperature Range		-55 to +150	°C
Tl	Maximum lead temperature for soldering purposes		300	°C
	1/8 frome case for 5 seconds

Thermal characteristics

Symbol	Parameter	JFFM3N150C	Units
Raic	Thermal Resistance, Junction-to-Case	4.1	°C/W
Rqja	Thermal Resistance, Junction-to-Ambient	62.5	°c/w

Electrical Characteristics tc=25 °c unless otherwise noted

Symbol	Parameter	Test Conditions	Min	Typ	Max	Units
Off Characteristics
BVdss	Drain - Source Breakdown Voltage	Vgs = 0 V, Id =250 uA	1500			V
/ BVdss/	Breakdown Voltage Temperature Coefficient	Id = 250 uA, Referenced to	--	1.3	--	v/°c
Tj	Breakdown Voltage Temperature Coefficient	25 °C	--	1.3	--	v/°c
	Zero Gate Voltage Drain Current	Vds = 1500 V, Vgs = 0 V			25	uA
Idss	Zero Gate Voltage Drain Current	Vds = 1200 V, Tc = 125 °C	--	--	500	uA
Igssf	Gate-Body Leakage Current, Forward	Vgs = 30 V, Vgs = 0 V	—	—	100	nA
Igssr	Gate-Body Leakage Current, Reverse	Vgs = -30 V, Vgs = 0 V	—	—	-100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	Vds = Vgs, Id = 250 uA	3	—	5	V
RDS(on)	Static Drain-Source on-Resista nee	Vgs = 10 V, Id= 1.5A	—	5	8	Q
gFS	Forward Transconductance	Vds = 30 V, Id= 1.5 A ( Note	--	4.5	--	S
gFS	Forward Transconductance	4)	--	4.5	--	S
Dynamic Characteristics
Ciss	Input Capacitance	Vds = 25 V, Vgs = 0 V, f =	—	1938	—	pF
Coss	Output Capacitance	1.0 MHz	—	104	—	pF
Crss	Reverse Transfer Capacitance		—	2.4	—	pF
Rg	Gate resistance	F= 1.0 MHz		3.5		Q
Switching Characteristics
td(on)	Turn-On Delay Time			34		ns
tr	Turn-On Rise Time	Vds = 750 V, Id=3.0A/ Rg =		17		ns
td(off)	Turn-Off Delay Time	100 , Vgs = 10 V (Note 4,5)		56		ns
tf	Turn-Off Fall Time			27		ns
Qe	Total Gate Charge	Vds = 750 V, Id =3.0 A Vgs =		9.3		nC
Qgs	Gate-Source Charge	10 V (Note 4,5)		15		nC
Qgd	Gate-Drain Charge			5.3		nC
Drain - Source Diode Characteristics and Maximum Ratings
Is	Maximum Continuous Drain-Source Diode Forward Current				3	A
Ism	Maximum Pulsed Drain-Source Diode Forward Current				12	A
Vsd	Drain-Source Diode Forward Voltage	Vgs = 0 V, Is = 3.0 A			1.5	V
trr	Reverse Recovery Time	Vgs = 0 V, Is = 3.0 A		302		ns
Qrr	Reverse Recovery Charge	dlF/dt = 100 A/us ( Note	--	10	--	uC
Qrr	Reverse Recovery Charge	4)	--	10	--	uC