Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 1200V N-Channel Silicon Carbide Power MOSFET SiC MOSFET

1200V N-Channel Silicon Carbide Power MOSFET SiC MOSFET

  • $10
    100-999
    Piece/Pieces
  • $6.5
    ≥1000
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-M2G0080120D

BrandYZPST

VDSmax1200V

Id42A

Pd208W

VGS,op-5/+20V

VGSmax-10/+25V

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100000

TransportationOcean,Air

Place of OriginChina

Supply Ability100000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

M2G0080120D

1200V N-Channel Silicon Carbide Power MOSFET SiC MOSFET

Features

• Optimized package with separate driver source pin

• High blocking voltage with low on-resistance

• High-speed switching with low capacitances

• Fast intrinsic diode with low reverse recovery (Qrr)

• Easy to parallel

• RoHS compliant

Benefits

• Higher System Efficiency

• Reduce cooling requirements

• Increased power density

• Enabling higher frequency

• Minimize gate ringing

• Reduction of system complexity and cost

Applications

• Switch Mode Power Supplies

• DC/DC converters

• Solar Inverters

• Battery Chargers

• Motor Drives

Power MOSFET


Maximum Ratings (Tc = 25 °C unless otherwise specified )

Symbol Parameter Value Unit Test Conditions Note
f^DSmax Drain-Source Breakdown Voltage 1200 V =0 V, /d=100 A
Id Continuous Drain Current 42 A 4s=20 V Tc=25 °C Fig. 18
Pd Power Dissipation 208 W *=25 °C Fig. 19
FgS,op Recommend Gate Source Voltage -0.25 V
J^Smax Maximum Gate Source Voltage -0.4 V AC (f>lHz) Note 1
Tj, Tstg Operating Junction and Storage Temperature Range -55 to °C
175
7l Soldering Temperature 260 °C

Electrical Characteristics

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
Static
BVds Drain-Source Breakdown Voltage 1200 - - V 4s=0 V, Zd=100 A
A)ss Zero Gate Voltage Drain Current 11 100 s=1200 V Pgs=0 V
Igss Gate-Source Leakage 10 250 nA 4s=20 V
FGS(th) Gate-Source Threshold Voltage 2 4 V Id=5 mA, Fig. 11
&DS(on) Drain-Source On-Resistance 78 100 mQ =20 V, Zd=20 A Fig. 6
Dynamic
Ciss Input Capacitance 1128 PF 4s=0 V,s=1000 V Fig. 17
C^oss Output Capacitance 86 f^l.OMHz,=25 mV
Crss Reverse Transfer Capacitance 5
Eoss Coss Stored Energy - 44 J Fig. 16
Qs Total Gate Charge 52 nC moo V Fig. 12
figs Gate-Source Charge - 17 =20 A
Qgd Gate-Drain Charge - 15 Fgs=-5/+20 V
td(cn) Turn-on Delay Time 41 ns  s=800 V
tr Turn-on Rise Time - 21 Fgs=-5/+20 V
Turn-off Delay Time 48 Id=20A
tf Turn-off Fall Time 16 Ro(ext)=2.5 Q
RG(int) Internal Gate Resistance - 4 n E.O MHz, Vac=25 mV

Test Circuit Schematic

N-Channel Power MOSFET

SiC MOSFET

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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