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Higher System Efficiency N-Channel SiC MOSFET TO247-4L

$36

50-499
Piece/Pieces
$32

≥500
Piece/Pieces

option:

VDSmax:1200V
VGSmax:-8/+22V
VGSop:-4/+18V
ID Tc=25℃:115A
ID Tc=100℃:76A
ID(pulse):250A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-M2A016120L

Brand: YZPST

Place Of Origin: China

VDSmax: 1200V

VGSmax: -8/+22V

VGSop: -4/+18V

ID Tc=25℃: 115A

ID Tc=100℃: 76A

ID(pulse): 250A

PD: 582W

TJ, TSTG: -55 to +175℃

Supply Ability & Additional Information

Productivity: 100000

Transportation: Ocean,Land

Place of Origin: CHINA

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

N-Channel SiC Power MOSFET P/N: YZPST-M2A016120L SiC MOSFET

Features

High Blocking Voltage with Low On-Resistance

High Speed Switching with Low Capacitance

Easy to Parallel and Simple to Drive

Benefits

Higher System Efficiency

Reduced Cooling Requirements

Increased Power Density

Increased System Switching Frequency

Applications

Renewable Energy

EV Battery Chargers

High Voltage DC/DC Converters

Switch Mode Power Supplies

Package

Part Number	Package
M2A016120L	TO-247-4

Maximum Ratings (TC=25℃ unless otherwise specified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDSmax	Drain-Source Voltage	1200	V	VGS=0V, ID=100μA
VGSmax	Gate-Source Voltage	-8/+22	V	Absolute maximum values
VGSop	Gate-Source Voltage	-4/+18	V	Recommended operational values
ID	Continuous Drain Current	115	A	VGS=18V, Tc=25℃
		76		VGS=18V, Tc=100℃
ID(pulse)	Pulsed Drain Current	250	A	Pulse width tp limited by TJmax
PD	Power Dissipation	582	W	Tc=25℃, TJ=175℃
TJ, TSTG	Operating Junction and Storage Temperature	-55 to +175	℃

Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
V(BR)DSS	Drain-Source Breakdown Voltage	1200	/	/	V	VGS=0V, ID=100μA
VGS(th)	Gate Threshold Voltage	1.9	2.6	4	V	VDS=VGS, ID=23mA
VGS(th)	Gate Threshold Voltage	/	1.8	/	V	VDS=VGS, ID=23mA, TJ=175℃
IDSS	Zero Gate Voltage Drain Current	/	1	100	µA	VDS=1200V, VGS=0V
IGSS+	Gate-Source Leakage Current	/	10	250	nA	VDS=0V, VGS=22V
IGSS-	Gate-Source Leakage Current	/	10	250	nA	VDS=0V, VGS=-8V
RDS(on)	Drain-Source On-State Resistance	/	16	21	mΩ	VGS=18V, ID=75A
RDS(on)	Drain-Source On-State Resistance	/	28	/		VGS=18V, ID=75A, TJ=175℃
gfs	Transconductance	/	40.5	/	S	VDS=20V, ID=75A
gfs	Transconductance	/	37	/	S	VDS=20V, ID=75A, TJ=175℃
Ciss	Input Capacitance	/	4300	/		VGS=0V
Coss	Output Capacitance	/	236	/	pF	VDS=1000V
Crss	Reverse Transfer Capacitance	/	35	/		f=1MHz
Eoss	Coss Stored Energy	/	136	/	µJ	VAC=25mV
EON	Turn-On Switching Energy	/	2.1	/	µJ	VDS=800V, VGS=-4V/18V
EOFF	Turn-Off Switching Energy	/	1.6	/	µJ	ID=40A, RG(ext)=2.5Ω, L=100μH
td(on)	Turn-On Delay Time	/	150	/
tr	Rise Time	/	38	/		VDS=800V, VGS=-4V/18V, ID=40A RG(ext)=2.5Ω, RL=20Ω
td(off)	Turn-Off Delay Time	/	108	/	ns
tf	Fall Time	/	35	/
RG(int)	Internal Gate Resistance	/	2.3	/	Ω	f=1MHz, VAC=25mV
QGS	Gate to Source Charge	/	60	/		VDS=800V
QGD	Gate to Drain Charge	/	44	/	nC	VGS=-4V/18V
QG	Total Gate Charge	/	242	/		ID=40A