Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 600V TO-220F BTA312X-600D triac have good performance at dv/dt and reliability
  • 600V TO-220F BTA312X-600D triac have good performance at dv/dt and reliability
  • 600V TO-220F BTA312X-600D triac have good performance at dv/dt and reliability
  • 600V TO-220F BTA312X-600D triac have good performance at dv/dt and reliability
  • 600V TO-220F BTA312X-600D triac have good performance at dv/dt and reliability
  • 600V TO-220F BTA312X-600D triac have good performance at dv/dt and reliability

600V TO-220F BTA312X-600D triac have good performance at dv/dt and reliability

  • $0.12
    5000-19999
    Piece/Pieces
  • $0.1
    ≥20000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BTA312X-600D

BrandYZPST

Place Of OriginChina

IT(RMS)12A

VDRM600V

VRRM600V

IGT≤5mA

ITSM95A

I2t45A2S

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability1000000000

Portshanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N:YZPST-BTA312X-600D   TRIACS


DESRCRIPTION

Due to mesa technology and Glass passivation, these devices have good

performance at dv/dt and reliability. The Triac series is suitable for general

purpose AC switching. They can be used as high power motor control - e.g.

washing machines, vacuum cleaners,andrefrigeration and air conditioning

compressors,electronic thermostats.

BTA312X-600D TO-220F



MAIN FEATURES

Symbol Value Unit
IT(RMS) 12 A
VDRM/VRRM 600 V
IGT 5 mA

ABSOLUTE MAX I MUM RATINGS

Symbol PARAMETER Value Unit
IT(RMS) RMS on-state current(all full sine wave) TO-220F Th≤61℃ 12 A
non-repetitive peak on-state current F=50HZ t=20ms 95
ITSM (full sine  wave, Tj=25℃) F=60HZ t= 16.7ms 105 A
I2t I2t Value for fusing tp= 10ms 45 A2S
di/dt Repetitive rate of rise of on-state Current after triggering IT  = 20 A; IG  = 0.2 A; dIG/dt = 0.2 A/µs A/μs
100
VDRM VRRM Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Tj=25℃
600 V
IGM Peak gate current tp=20us 2 A
PGM peak gate power 5 W
PG(AV) Average gate power dissipation over any 20 ms period 0.5 W
Tstg Storage junction temperature range - 40 to +150
Tj Operating junction temperature range 125

STATICCHARACTERISTICS

Symbol Test Condition Quadrant Value Unit
MIN TYP MAX
T2+ G+ 5
VD= 12V, IT=0. 1A, T=25°C See figure8 T2+ G- 5
IGT T2- G- 5
T2+ G+ 10
VD= 12V, IT=0. 1A, T=25°C See figure10 T2+ G- 15
IL T2- G- 15
IH VD = 12 V; Tj = 25  , See figure11 10 mA
VT IT=0. 1A, Tj=25°C See figure9 1.3 1.6
VD= 12V, IT=0. 1A, T=25°C See figure7 0.7 1.5
VGT VD=400V,IT=0. 1A, Tj=125°C See figure11 0.25 0.4 V
ID VD = 600 V; Tj = 125 °C 0.1 0.5 mA

Dynamic characteristics

Symbol Test Condition Value Unit
MIN TYP MAX
dVD/dt VDM = 402 V; Tj = 125 °C; exponential 20 V/us
waveform; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; 1 A/ms
dVcom/dt = 20 V/µs; gate open circuit;
"without snubber" condition
dIcom/dt VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; 1.5 A/ms
dVcom/dt = 10 V/µs; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; 4.5 A/ms
dVcom/dt = 1 V/µs; gate open circuit
tgt ITM = 20 A; VD = 600 V; IG = 0. 1 A; 2
dIG/dt = 5 A/µs us

PACKAGE MECHANICAL DATA

TO-220F

YZPST-BTA312X-600D PACKAGE

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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