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BTA208X-600E triac high dv/dt rate with strong resistance to electromagnetic interface

$0.14

5000-49999
Piece/Pieces
$0.1

≥50000
Piece/Pieces

option:

IT(RMS):8A
VDRM:600V
VRRM:600V
VTM:≤1.5V
ITSM:80A
I2t:32A2S

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BTA208X-600E

Brand: YZPST

Place Of Origin: China

IT(RMS): 8A

VDRM: 600V

VRRM: 600V

VTM: ≤1.5V

ITSM: 80A

I2t: 32A2S

DI/dt: 50A/ μs

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Others,Ocean

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

BTA208 Series 8A Triacs

YZPST-BTA208X-600E

DESCRIPTION:
With high ability to withstand the shock loading of Large
current, BTA208 series triacs provide high dv/dt
rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrants
products especially recommended for use on inductive
load. From all three terminals to external heatsink,
BTA208 provides a rated insulation voltage of 2500 VRM

S complying with UL standards (File ref: E516503).

TO 22OF

MAIN FEATURES:

symbol	value	unit
IT(RMS)	8	A
VDRM/VRRM	600/800	V
VTM	≤1.5	V

ABSOLUTE MAXIMUM RATINGS:

Symbol	Parameter	Value	Unit
ITSM	Non repetitive surge peak on-state Current (tp=10ms)	80	A
I2t	(tp=10ms)	32	A2S
dI/dt	IG=2IGT ，tr≤100ns,Tj=125℃	50	A/ μs
IGM	Peak gate current(tp=20us)	2	A
PG(AV)	Average gate power	1=0.5	W
Tstg Tj	Storage temperature Operating junction temperature	-40--+125 -40--+125	℃
Viso	AC RMS App lied for 1 minute Between lead and case	1800	V

I2t value for fusing (tp=10ms)	I2t	32	A2s
Critical rate of rise of on-state current(IG=2 × IGT)	dI/dt	50	A/ μs
Peak gate current	IGM	4	A
Average gate power dissipation	PG(AV)	1	W
Peak gate power	PGM	5	W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Parameter				Value
Parameter	Test Condition	Quadrant		TW	SW	CW	BW	Unit
IGT	VD=12V,			5	10	35	50	mA
VGT	RL=33Ω	Ⅰ- Ⅱ-Ⅲ	MAX	1.5				V
VGD	VD=VDRM	Ⅰ- Ⅱ-Ⅲ	MIN	0.2				V
IH	IT=100mA		MAX	10	20	40	60	mA
		Ⅰ-Ⅲ		20	25	50	70
IL	IG=1.2IGT	Ⅱ	MAX	25	35	70	90	mA
	VD=2/3VDRM Tj=125℃ Gate open
dV/dt	VD=2/3VDRM Tj=125℃ Gate open		MIN	50	200	500	1000	V/ µs