Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > BTA208X-600E triac high dv/dt rate with strong resistance to electromagnetic interface
  • BTA208X-600E triac high dv/dt rate with strong resistance to electromagnetic interface
  • BTA208X-600E triac high dv/dt rate with strong resistance to electromagnetic interface
  • BTA208X-600E triac high dv/dt rate with strong resistance to electromagnetic interface
  • BTA208X-600E triac high dv/dt rate with strong resistance to electromagnetic interface
  • BTA208X-600E triac high dv/dt rate with strong resistance to electromagnetic interface

BTA208X-600E triac high dv/dt rate with strong resistance to electromagnetic interface

  • $0.14
    5000-49999
    Piece/Pieces
  • $0.1
    ≥50000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BTA208X-600E

BrandYZPST

Place Of OriginChina

IT(RMS)8A

VDRM600V

VRRM600V

VTM≤1.5V

ITSM80A

I2t32A2S

DI/dt50A/ μs

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOthers,Ocean

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:

BTA208 Series 8A Triacs 

YZPST-BTA208X-600E

DESCRIPTION:
With high ability to withstand the shock loading of Large
current, BTA208 series triacs provide high dv/dt
rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrants
products especially recommended for use on inductive
load. From all three terminals to external heatsink,
BTA208 provides a rated insulation voltage of 2500 VRM

S complying with UL standards (File ref: E516503).

TO 22OF


MAIN FEATURES:

symbol

value

unit

IT(RMS)

8

A

VDRM/VRRM

600/800

V

VTM

≤1.5

V

ABSOLUTE MAXIMUM RATINGS:

Symbol

Parameter

Value

Unit

ITSM

Non repetitive surge peak on-state

Current (tp=10ms)

80

A

I2t

(tp=10ms)

32

A2S

dI/dt

IG=2IGT tr100ns,Tj=125

50

A/ μs

IGM

Peak gate current(tp=20us)

2

A

PG(AV)

Average gate power

1=0.5

W

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+125

-40--+125

Viso

AC RMS App lied for 1 minute Between lead and case

 

1800

 

V

I2t value for fusing (tp=10ms)

I2t

32

A2s

Critical rate of rise of on-state current(IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)

Parameter Value
Test Condition Quadrant TW SW CW BW Unit
IGT VD=12V, 5 10 35 50 mA
VGT RL=33Ω - - MAX 1.5 V
VGD VD=VDRM - - MIN 0.2 V
IH IT=100mA MAX 10 20 40 60 mA
- 20 25 50 70
IL IG=1.2IGT MAX 25 35 70 90 mA
VD=2/3VDRM   Tj=125 Gate open
dV/dt MIN 50 200 500 1000 V/ µs

 

 

70

90

 

 

dV/dt

VD=2/3VDRM   Tj=125 Gate open

 

MIN

 

200

 

500

 

V/ µs

STATIC CHARACTERISTICS

Symbol Test Condition Value Unit
VTM ITM=11A   tp=380μs Tj=25 MAX 1.5 V
IDRM Tj=25 5 µA
IRRM VDRM= VRRM Tj= 125 MAX 1 mA

PACKAGE MECHANICAL DATA

TO-220F

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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