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Low inductance module structure 1200V 400A IGBT Power Module

$132

5-49
Piece/Pieces
$98

≥50
Piece/Pieces

option:

VCES：1200V
IC:600A
ICRM：1200A
VGES：±20V
Ptot：3750W
Tvjop：-40--+150℃
Tstg：-40--+125℃

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-FF600R12ME4

Brand: YZPST

Place Of Origin: China

VCES: 1200V

IC: 600A

ICRM: 1200A

VGES: ±20V

Ptot: 3750W

Tvjop: -40--+150℃

Tstg: -40--+125℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000

Transportation: Ocean,Land,Express,Others

Place of Origin: china

Supply Ability: 100000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

YZPST-FF600R12ME4

IGBT Power Module

Applications

Inverter for motor drive

AC and DC servo drive amplifier

UPS (Uninterruptible Power Supplies)

Features

Low Vce(sat) with SPT+ technology

Vce(sat) with positive temperature coefficient

Including fast & soft recovery anti-parallel FWD

High short circuit capability(10us)

Low inductance module structure

YZPST-FF600R12ME4 IGBT

Absolute Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25℃	1200	V
Continuous Collector Current	IC	Tc=100℃	600	A
Peak Collector Current	ICRM	ICRM=2IC	1200	A
Gate-Emitter Voltage	VGES	Tvj=25℃	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25℃ Tvjmax=175℃	3750	W

IGBT Characteristics

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Gate-emitter Threshold Voltage	VGE(th)	VGE=VCE, IC =3mA,Tvj=25℃	5	5.8	6.5	V
		VCE=1200V,VGE=0V, Tvj=25℃			1	mA
Collector-Emitter Cut-off Current	ICES	VCE=1200V,VGE=0V, Tvj=125℃			5	mA
Collector-Emitter		Ic=600A,VGE=15V, Tvj=25℃		1.7		V
Saturation Voltage	VCE(sat)	Ic=600A,VGE=15V, Tvj=125℃		2		V
Input Capacitance	Cies			43.1		nF
Output Capacitance	Coes	VCE=25V,VGE =0V,		2.25		nF
Reverse Transfer Capacitance	Cres	f=1MHz, Tvj=25℃		1.95		nF
Internal Gate Resistance	Rgint			1.25		Ω
Turn-on Delay Time	td(on)			250		ns
Turn-on Delay Time	td(on)			250		ns
Rise Time	tr	IC =600 A		88		ns
Turn-off Delay Time	td(off)	VCE = 600 V		560		ns
Fall Time	tf	VGE = ±15V		131		ns
Energy Dissipation During Turn-on Time	Eon	RG = 1.2Ω		33.1		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=25℃		57.8		mJ
Turn-on Delay Time	td(on)			300		ns


Rise Time	tr	IC =600 A		102		ns
Turn-off Delay Time	td(off)	VCE = 600 V		650		ns
Fall Time	tf	VGE = ±15V		180		ns
Energy Dissipation During Turn-on Time	Eon	RG = 1.2Ω		50.2		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=125℃		87.8		mJ
		Tp≤10us,VGE=15V,
SC Data	Isc	Tvj=150℃,Vcc=600V,		2400		A
		VCEM≤1200V