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  • Low inductance module structure 1200V 400A IGBT Power Module
  • Low inductance module structure 1200V 400A IGBT Power Module
  • Low inductance module structure 1200V 400A IGBT Power Module
  • Low inductance module structure 1200V 400A IGBT Power Module
  • Low inductance module structure 1200V 400A IGBT Power Module

Low inductance module structure 1200V 400A IGBT Power Module

  • $132
    5-49
    Piece/Pieces
  • $98
    ≥50
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-FF600R12ME4

BrandYZPST

Place Of OriginChina

VCES1200V

IC600A

ICRM1200A

VGES±20V

Ptot3750W

Tvjop-40--+150℃

Tstg-40--+125℃

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000

TransportationOcean,Land,Express,Others

Place of Originchina

Supply Ability100000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:
YZPST-FF600R12ME4
IGBT Power Module
Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Features
Low Vce(sat) with SPT+ technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)

Low inductance module structure

YZPST-FF600R12ME4 IGBT

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Value

Unit

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mA, Tvj=25

1200

V

Continuous Collector Current

IC

Tc=100

600

A

Peak Collector Current

ICRM

ICRM=2IC

1200

A

Gate-Emitter Voltage

VGES

Tvj=25

±20

V

Total Power Dissipation

(IGBT-inverter)

Ptot

Tc=25

Tvjmax=175

3750

W

IGBT Characteristics

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Gate-emitter Threshold Voltage VGE(th) VGE=VCE,  IC =3mA,Tvj=25 5 5.8 6.5 V
VCE=1200V,VGE=0V, Tvj=25 1 mA
Collector-Emitter Cut-off Current ICES VCE=1200V,VGE=0V, Tvj=125 5 mA
Collector-Emitter Ic=600A,VGE=15V, Tvj=25 1.7 V
Saturation Voltage VCE(sat) Ic=600A,VGE=15V, Tvj=125 2 V
Input Capacitance Cies 43.1 nF
Output Capacitance Coes VCE=25V,VGE =0V, 2.25 nF
Reverse Transfer Capacitance Cres f=1MHz, Tvj=25 1.95 nF
Internal Gate Resistance Rgint 1.25 Ω
Turn-on Delay Time td(on) 250 ns
Rise Time tr IC =600 A 88 ns
Turn-off Delay Time td(off) VCE = 600 V 560 ns
Fall Time tf VGE = ±15V 131 ns
Energy Dissipation During Turn-on Time Eon RG = 1.2Ω 33.1 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=25 57.8 mJ
Turn-on Delay Time td(on) 300 ns
Rise Time tr IC =600 A 102 ns
Turn-off Delay Time td(off) VCE = 600 V 650 ns
Fall Time tf VGE = ±15V 180 ns
Energy Dissipation During Turn-on Time Eon RG = 1.2Ω 50.2 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=125 87.8 mJ
Tp≤10us,VGE=15V,
SC Data Isc Tvj=150,Vcc=600V, 2400 A
VCEM≤1200V

Package Dimensions

FF600R12ME4 Package


Product Categories : Semiconductor Module Devices > IGBT Module

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