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complementary silicon power transistors 2N3055/MJ2955

$0.5

50-499
Piece/Pieces
$0.38

≥500
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

50 Piece/Pieces

Transportation:

Ocean,Air

Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-MJ2955(YZPST-2N3055)

Brand: YZPST

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 10000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2015,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

complementary silicon power transistors 2N3055/MJ2955

DESCRIPTION

The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case.

It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

The complementary PNP type is MJ2955.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter

l

Value

Unit

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

7

V

Collector Current

IC

15

A

Base Current

IB

7

A

Total Dissipation at

Ptot

115

W

Max. Operating Junction Temperature

Tj

150

oC

Storage Temperature

Tstg

0

oC

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

ICEO

VCE=50V, IB=0

—

—

0.7

mA

Emitter Cut-off Current

IEBO

VEB=7V, IC=0

—

—

5.0

mA

Collector-Emitter Sustaining Voltage

VCEO

IC=100mA, IB=0

60

—

—

V

DC Current Gain

hFE(1)

VCE=4.0V, IC=4.0A

30

—

70

hFE(2)

VCE=4.0V, IC=10A

15

—

Collector-Emitter Saturation Voltage

VCE(sat)

IC=4.0A,IB=400mA

—

—

1.0

V

IC=10A,IB=3.3A

—

—

3.0

Base-Emitter On Voltage

VBE(on)

VCE=4V,IC=4.0A

—

—

1.8

V

Current Gain Bandwidth Product

fT

VCE=4.0V,IC=500mA

—

3.0

—

MHz

Power Transistor in TO3 package

Parameter Type	Polarity	PCM	ICM	VCEO	VCBO	VEBO	HFE				Note
		PCM	ICM	VCEO	VCBO	VEBO	MIN	MAX	IC	VCE
		W	A	V	V	V	MIN	MAX	A	V
2N3055	NPN	115	15	100	100	8	40	70	4	4	Inverter power supply
2N3773	NPN	150	16	140	160	8	20	60	8	4	Inverter power supply
2N6609	PNP	150	16	140	160	8	20	60	8	4
2N3771	NPN	150	30	80	100	8	20	60	15	4
2N6322	NPN	200	30	200	300	8	40	150	5	5
2N6688	NPN	200	20	200	300	8	20	80	10	2
2N6678	NPN	175	15	400	650	8	20	50	1	5	Ultrasonic equipment
MJ2955	PNP	115	15	100	100	8	40	70	4	4
MJ15003	NPN	250	20	140	140	8	80	150	5	2	Audio power amplifier
MJ15004	PNP	250	20	140	140	8	80	150	5	2	Audio power amplifier
MJ15024	NPN	250	16	250	400	8	20	60	8	4	Audio power amplifier
MJ15025	PNP	250	16	250	400	8	20	60	8	4	Audio power amplifier
MJ16012	NPN	175	15	450	600	8	15	40	5	5	Ultrasonic equipment
MJ16016	NPN	250	20	450	600	8	15	40	10	5	Ultrasonic equipment
BUS13A	NPN	175	15	450	600	8	15	60	5	5	Ultrasonic equipment
BUS14A	NPN	250	30	450	800	8	10	40	10	5	Ultrasonic equipment
BUX48A	NPN	175	15	450	850	8	15	60	5	2	Ultrasonic equipment
BUX98A	NPN	250	30	450	1000	8	15	50	1	5	Ultrasonic equipment
2SC2246	NPN	100	15	400	450	8	10	40	6	5	Embroidery machine
2SC2625	NPN	80	10	400	450	8	10	40	4	5	Ultrasonic equipment
2SC3058	NPN	200	30	400	600	8	10	40	20	5	Ultrasonic equipment
2SC3998	NPN	250	25	600	1200	8	10	40	10	5	Plastic welding
2SD718	NPN	80	10	120	120	8	70	140	1	5	Audio power amplifier
2SB688	PNP	80	10	120	120	8	70	140	1	5	Audio power amplifier
2SC5198	NPN	100	10	140	140	8	70	140	1	5	Audio power amplifier
2SA1941	PNP	100	10	140	140	8	70	140	1	5	Audio power amplifier
2SC5200	NPN	150	15	230	230	8	70	140	2	5	Audio power amplifier
2SA1943	PNP	150	15	230	230	8	70	140	2	5	Audio power amplifier

Darlington transistor in TO3 package

Parameter Type	Polarity	PCM	ICM	VCEO	VCBO	VEBO	HFE				Note
		PCM	ICM	VCEO	VCBO	VEBO	MIN	MAX	IC	VCE
		W	A	V	V	V	MIN	MAX	A	V
MJ10000	NPN	175	20	350	450	8	1K	8K	2	5	motor mower
MJ10012	NPN	175	10	400	600	8	1K	8K	2	5	Automobile igniter
MJ11015	PNP	200	30	120	120	8	2K	10K	2	5	Audio power amplifier
MJ11016	NPN	200	30	120	120	8	2K	10K	2	5	Inverter power supply
MJ11032	NPN	300	50	120	120	8	2K	10K	2	5	Inverter power supply
MJ11033	PNP	300	50	120	120	8	2K	10K	2	5	Inverter power supply
FW26025A	PNP	100	15	120	120	8	2K	10K	2	5	Fan driver
FW26025A	PNP	200	30	120	120	8	2K	10K	2	5	Fan driver
BU932	NPN	150	15	400	500	8	2K	8K	2	5	Automobile igniter
BU941	NPN	180	15	400	500	8	2K	8K	2	5	Automobile igniter
2SD798	NPN	30	6	300	600	8	1K	8K	2	5	motor mower
TIP122	NPN	65	5	100	100	8	1K	10K	2	5	switching power supply
TIP127	PNP	65	5	100	100	8	1K	10K	2	5	switching power supply
TIP132	NPN	70	8	100	100	8	1K	10K	2	5	LED driver
TIP137	PNP	70	8	100	100	8	1K	10K	2	5	LED driver
TIP142	NPN	125	10	120	120	8	1K	10K	2	5	Voltage regulator
TIP147	PNP	125	10	120	120	8	1K	10K	2	5	Voltage regulator

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Parameter	l	Value	Unit
Collector-Base Voltage	VCBO	100	V
Collector-Emitter Voltage	VCEO	60	V
Emitter-Base Voltage	VEBO	7	V
Collector Current	IC	15	A
Base Current	IB	7	A
Total Dissipation at	Ptot	115	W
Max. Operating Junction Temperature	Tj	150	oC
Storage Temperature	Tstg	0	oC

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Collector Cut-off Current	ICEO	VCE=50V, IB=0	—	—	0.7	mA
Emitter Cut-off Current	IEBO	VEB=7V, IC=0	—	—	5.0	mA
Collector-Emitter Sustaining Voltage	VCEO	IC=100mA, IB=0	60	—	—	V
DC Current Gain	hFE(1)	VCE=4.0V, IC=4.0A	30	—	70
DC Current Gain	hFE(2)	VCE=4.0V, IC=10A	15	—
Collector-Emitter Saturation Voltage	VCE(sat)	IC=4.0A,IB=400mA	—	—	1.0	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC=10A,IB=3.3A	—	—	3.0	V
Base-Emitter On Voltage	VBE(on)	VCE=4V,IC=4.0A	—	—	1.8	V
Current Gain Bandwidth Product	fT	VCE=4.0V,IC=500mA	—	3.0	—	MHz