Home > Products > Semiconductor Plastic Package > Silicon Transistor > TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906

Contact Supplier

Mr. John chang

Leave a message

Contact Now

TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906

$8.5

100-499
Others
$6.9

≥500
Others

option:

Collector-Base Voltage：60V
Collector-Emitter Voltage：40V
Emitter-Base Voltage:6V
Collector Current -Continuous:0.2A

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-2N3904

Place Of Origin: China

Collector-Base Voltage: 60V

Collector-Emitter Voltage: 40V

Emitter-Base Voltage: 6V

Collector Current -Continuous: 0.2A

Collector Power Dissipation: 0.625W

Operation Junction And Storage Temperat: -55-150℃

Supply Ability & Additional Information

Productivity: 10000000

Transportation: Ocean,Land,Air

Supply Ability: 10000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: KPCS

TO-92 Plastic-Encapsulate Transistors

YZPST-2N3904 TRANSISTOR (NPN)

FEATURE

NPN silicon epitaxial planar transistor for switching and

Amplifier applications

As complementary type, the PNP transistor 2N3906 is

Recommended

This transistor is also available in the SOT-23 case with

the type designation MMBT3904

YZPST-2N3904 TO92

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
2N3904	T0-92	BuIk	1000pcs/Bag
2N3904-TA	T0-92	Tape	2000pcs/Box

MAXIMUM RATINGS (Ta=25'℃ unless otherwise noted)

Symbo1	Parameter	Va1ue	Unit
VCB0	Collector-Base Voltage	60	V
VCE0	Collector-Emitter Voltage	40	V
VEB0	Emitter-Base Voltage	6	V
C	Collector Current -Continuous	0.2	A
PC	Collector Power Dissipation	0.625	W
TJ,Tstg	Operation Junction and Storage Temperature Range	-205	C

=25℃ unless otherwise specified

Parameter	Symbo1	Test	Min	Typ	Max	Unit

		conditions
Co11ector﹒base	V(BR)CBO	IC=10ΚA, IE=0	60			V
breakdown
vo1tage
Co11ector﹒emitter	V(BR)CEO	IC= 1mA , IB=0	40			V
breakdown
vo1tage
Emitter﹒base	V(BR)EBO	IE= 10ΚA, IC=0	6			V
breakdown
vo1tage
Co11ector cut﹒off	ICBO	VCB=60V, IE=0			0.1	UA

current
Co11ector	ICEX	VCE=30V, VEB(off)=3V			0.05	UA
cut﹒off

current
Emitter	IEBO	VEB= 5V, IC=0			0.1	UA
cut﹒off
current
	FE1	VCE=1V, IC=10mA	100		400
DC
current	FE2	VCE=1V, IC=50mA	60
gain	FE3	VCE=1V, IC=100mA	30
Co11ector﹒emitter	VCE(sat)	IC=50mA, IB=5mA			0.3	V
saturation
vo1tage
Base﹒emitter	VBE(sat)	IC=50mA, IB=5mA			0.95	V
saturation
vo1tage
Transition	T	VCE=20V,IC=10mA,f=100MHz	300			MHZ
frequency
De1ay	td	VCC=3V,VBE=0.5V,			35	ns
Time		IC=10mA,IB1=1mA
Rise	tr				35	ns
Time
Storage	ts	VCC=3V, IC=10mA			200	ns
Time		IB1=IB2=1mA
Fa11	tf				50	ns
Time

Outline Dimensions

YZPST-2N3904 Dimensions

Symbo1	Dimensions		Dimensions
	n		ln
	Mi11imeters		lnches
	Min	Max	Min	Max
A	3.3	3.7	0.13	0.146
A1	1.1	1.4	0.043	0.055
b	0.38	0.55	0.015	0.022
c	0.36	0.51	0.014	0.02
D	4.3	4.7	0.169	0.185
D1	3.43		0.135
E	4.3	4.7	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.44	2.64	0.096	0.104
L	14.1	14.5	0.555	0.571
Κ		1.6		0.063
h	0	0.38	0	0.015