650V 100A Trench Field-Stop Technology IGBT

Trench Field-Stop Technology IGBT 

YZPST-D100H065AT1S3

Features

    650V, 100A

    VCE(sat)(typ.)  =1.75V@VGE=15V, IC=100A

    Maximum Junction Temperature 175 

    Pb-free Lead Plating; RoHS Compliant

Applications

    Solar Converters

    Uninterrupted Power Supply

    Welding Converters

    Mid to High Range Switching Frequency Converters

Key Performance and Package Parameters

Absolute Maximum Ratings

Electrical Characteristics (Tc=25 unless otherwise noted.)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVCES	Collector-Emitter	VGE=0V, IC=200uA	650			V
	Breakdown Voltage			---	---
ICES	Collector-Emitter Leakage Current	VCE=650V, VGE=0V			1	mA
			---	---
	Gate Leakage Current, Forward	VGE=20V, VCE=0V			600	nA
			---	---
IGES	Gate Leakage Current, Reverse	VGE=-20V, VCE=0V			600	nA
			---	---
VGE(th)	Gate Threshold Voltage	VGE=VCE , IC=750uA	4.2	---	6	V
VCE(sat)	Collector-Emitter	VGE=15V, IC=100A, Tj=25 ℃	---	1.75	2.2	V
	Saturation Voltage	VGE=15V, IC=100A, Tj=125 ℃	---	2.05	---	V
td(on)	Turn-on Delay Time		---	35	---	ns
tr	Turn-on Rise Time	VCC=400V	---	155	---	ns
td(off)	Turn-off Delay Time	VGE=±15V	---	188	---	ns
tf	Turn-off Fall Time	IC=100A	---	69	---	ns
Eon	Turn-on Switching Loss	RG=8	---	4.35	---	mJ
Eoff	Turn-off Switching Loss	Inductive Load	---	1.11	---	mJ
Ets	Total Switching Loss	TC=25 ℃	---	5.46	---	mJ
Cies	Input Capacitance	VCE=25V	---	7435	---	pF
Coes	Output Capacitance	VGE=0V	---	237	---	pF
Cres	Reverse Transfer	f =1MHz		128		pF
	Capacitance		---		---

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
		IF=100A, Tj=25 ℃	---	1.65	2.2	V
VF	Diode Forward Voltage	IF=100A, Tj=150 ℃	---	1.4	---	V
trr	Diode Reverse Recovery Time			201		ns
		VR=400V	---		---
		IF=100A
Irr	Diode peak Reverse	dIF/dt=200A/us		19		A
	Recovery Current	TC=25 ℃	---		---
Qrr	Diode Reverse Recovery Charge			2.45		uC
			---		---

Note1    Repetitive rating, pulse width limited by maximum junction temperature

Package Information