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600V Triacs sensitive gate TO-220AB YZPST brand

Name: YZPST-T2550H-600T 600V Triacs sensitive gate TO-220AB
Uploaded: 2022-12-17T23:44:20+08:00
Description: 600V Triacs sensitive gate TO-220AB

$0.32

100-999
Piece/Pieces
$0.23

≥1000
Piece/Pieces

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-T2550H-600T

Brand: YZPST

Application: Microphone, High Frequency, Power Switch Circuits, Linear Amplifier Bias, General Purpose

VDRM: 600V

VRRM: 600V

VDRM VRRM: 600V

Tstg: -40 ~150℃

IT(RMS): 25A

TJ: -40 ~125℃

Supply Type: Odm, Agency, Other

Reference Materials: Photo

Package Type: Surface Mount, Throught Hole

Installation Method: Through Hole, Surface Mount, Chassis Mount, Stud Mount, Chassis, Stud Mount, Not Applicable

FET Function: Not Applicable

Configuration: Not Applicable

Supply Ability & Additional Information

Productivity: 100000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Packaging & Delivery

Selling Units:: Piece/Pieces

Triacs sensitive gate

YZPST-T2550H-600T

GENERAL DESCRIPTION

Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )

Parameter	Symbol	Typ	Unit
Repetitive peak off-state voltages	VDRM VRRM	600	V
RMS on-state current	IT(RMS)	25	A
Non-repetitive peak on-state current	ITSM	210	A
Max.Operating Junction temperature	Tj	‐40‐‐+125	℃
Storage Temperature	Tstg	‐40‐‐+150	℃

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ )

Parameter		Symbol	Test Conditions	Min	Typ	Max	Unit
Repetitive peak off-state voltages		VDRM VRRM		600	—	—	V
RMS on-state current		IT(RMS)	Full sine wave : Tmb≤120℃	—	25	—	A
On-state voltage		VT	IT=25A	—	1.2	1.5	V
Holding current		IH	VD = 12 V; IGT = 0.1 A	—	—	50	mA
Gate trigger current	T2+G+	IGT	VD = 12 V; IGT = 0.1 A	—	14	50	mA
	T2+G-			—	28	50
	T2-G-			—	25	50
Latching current	T2+G+	IL	VD = 12 V; IGT = 0.1 A	—	—	90	mA
	T2+G-			—	—	90
	T2-G-			—	—	90
Gate trigger voltage		VGT	VD = 12 V; IT = 0.1 A	—	—	1.3	V