Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 65R72GF N-channel Power MOSFET as replacement of STW48N60M2

Contact Supplier

Mr. John chang

Leave a message

Contact Now

65R72GF N-channel Power MOSFET as replacement of STW48N60M2

$4.25

100-999
Piece/Pieces
$3.2

≥1000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-65R72GF

Brand: YZPST

Place Of Origin: China

Vds (V) At Tj Max.: 700

Rds(ofi)max. At 25°C (mQ): Vgs=10V 72

Qg Max. (nC): 130

Qgs (nC): 30

Qgd (nC): 34

Configuration: single

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

N-channel Power MOSFET

Type:YZPST-65R72GF

PRODUCT SUMMARY
Vds (V) at Tj max.	700
Rds(ofi)max. at 25°C (mQ)	Vgs=10V 72
Qg max. (nC)	130
Qgs (nC)	30
Qgd (nC)	34
Configuration	single

Features
Fast Body Diode MOSFET
|D=47A(Vgs=10V)
Ultra Low Gate Charge
Improved dv/dt Capability
RoHS compliant
65R72GF N-channel Power MOSFET as replacement of STW48N60M2

65R72GF N-channel Power MOSFET as replacement of STW48N60M2

Applications

Switching Mode Power Supplies (SMPS)
Server and Telecom Power Supplies
Welding& Battery Chargers
Solar(PV Inverters)
AC/DC Bridge Circuits

ORDERING INFORMATION
Device	YZPST-65R72GF
Device Package	TO-247
Marking	65R72GF

ABSOLUTE MAXIMUM RATINGS (Tc=25oC, unless otherwise noted)
Parameter	Symbol	Limit	Unit
Drain to Source Voltage	Vdss	650	V
Continuous Drain Current (@Tc=25°C)	Id	47⑴	A
Continuous Drain Current (@Tc=100°C)	Id	29⑴	A
Drain current pulsed (2)	Idm	138⑴	A
Gate to Source Voltage	Vgs	±30	V
Single pulsed Avalanche Energy(3)	Eas	1500	mJ
MOSFET dv/dt ruggedness (@VDS=0~400V)	dv/dt	25	V/ns
Peak diode Recovery dv/dt ⑷	dv/dt	15	V/ns
Total power dissipation (@Tc=25°C)	Pd	417	W
Derating Factor above 25°C	Pd	3.34	w/°c
Operating Junction Temperature & StorageTemperature	Tstg, Tj	-55to + 150	°C
Maximum lead temperature for soldering purpose	Tl	260	°C