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Single mesa structure BTA12-800BW 800V Triac TO-220A

$0.16

4000-9999
Piece/Pieces
$0.12

≥10000
Piece/Pieces

option:

IT (RMS)：12A
VDRM / VRRM：800V
VTM：1.55V
ITSM：155A
I2t：70A2S
dI/dt：50A/ μs
IGM：4A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BTA12-800BW

Brand: YZPST

Place Of Origin: China

IT (RMS): 12A

VDRM / VRRM: 800V

VTM: 1.55V

ITSM: 155A

I2t: 70A2S

DI/dt: 50A/ μs

IGM: 4A

PG(AV): 1W

Tstg: -40--+150℃

Tj: -40--+125℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

YZPST-BTA12-800BW

●Product features
Single mesa structure (Single Mesa),
Table glass passivation process,
Voltage stability
The ability of strong current shock resistance
The applicable model： BTA12
The main purpose
Washing machine, the hair straightened
Solid state relay, AC motor speed control
●Package

TO-220A

BTA12-600C

Main Feature (Tj=25℃)

Symbol	Value	Unit
IT (RMS)	12	A
VDRM / VRRM	600/800	V
VTM	1.55	V

Absolute ratings (Limiting Values)

Symbol	Parameter	Value	Unit
ITSM	Non repetitive surge peak on-state Current (tp=10ms)	115	A
I2t	(tp=10ms)	70	A2S
dI/dt	IG=2IGT ，tr≤100ns,Tj=125℃	50	A/ μs
IGM	Peak gate current(tp=20us)	4	A
PG(AV)	Average gate power	1	W
Tstg Tj	Storage temperature Operating junction temperature	-40--+150 -40--+125	℃

Thermai Resistances

Symbol
Symbol	Parameter		Value	Unit
		TO-220A	2.3
Rth (j-c)	Junction to case	TO-220B/TO-220C	1.4	℃/W
		TO-220F	3.9

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol	Test Conditions		Value						Unit
Symbol	Test Conditions		TW	SW	CW	BW	C	B
IGT	VD=12V, RL=30Ω	ⅠⅡⅢ	≤5	≤10	≤25	≤50	≤25	≤50	mA
IGT	VD=12V, RL=30Ω	Ⅳ	----	----	----	----	≤50	≤100	mA
IDRM	VD=VDRM	Tj=25℃	≤5						μA
IDRM	VD=VDRM	Tj=125℃	≤1						mA
IRRM	VD=VRRM	Tj=25℃	≤5						μA
IRRM	VD=VRRM	Tj=125℃	≤1						mA
		ⅠⅢ	≤10	≤25	≤50	≤70	≤40	≤50
IL	IG=1.2IGT	Ⅳ	----	----	----	----	≤40	≤50	mA
		Ⅱ	≤15	≤30	≤60	≤80	≤80	≤100
VGT	VD=12V ,RL=30Ω		≤1.3						V
VGD	VD=VDRM, Tj=125℃RL=3.3KΩ		≥0.2						V
VTM	ITM=17A,tp=380 μs		1.55						V
IH	VD=12V ，IT=200mA		≤20	≤25	≤35	≤50	≤25	≤50	mA
dV/dt	VD=67%VDRM,		≥40	≥	≥	≥ 1000	≥	≥400	v/ μs
dV/dt	GateOpen, Tj=125℃		≥40	100	400	≥ 1000	200	≥400	v/ μs