Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-220 BTA216-800B triac series is suitable for general purpose AC switching

Contact Supplier

Mr. John chang

Leave a message

Contact Now

TO-220 BTA216-800B triac series is suitable for general purpose AC switching

$0.15

4000-19999
Piece/Pieces
$0.13

≥20000
Piece/Pieces

option:

IT(RMS):16A
VDRM/VRRM:600/800V
IGT:≤10mA
IT(RMS):16A
ITSM (t=20ms):140A
ITSM (t= 16.7ms):150A

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-BTA216-800B

Brand: YZPST

Place Of Origin: China

IT(RMS): 16A

VDRM/VRRM: 600/800V

IGT: ≤10mA

ITSM (t=20ms): 140A

ITSM (t= 16.7ms): 150A

I2t: 98A2S

Di/dt: 100A/μs

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

BTA216TRIACS

YZPST-BTA216-800B

DESRCRIPTION:
Due to separation glass passivation, these devices have good
performance at dv/dt and reliability. The Triac series is suitable for general purpose AC switching. They can be used as an On-Off
function in the applications such as static relays, heating regulation, or for phase control operation in light dimmers, motor speed

controllers.

TO-220

MAIN FEATURES

Symbol Value Unit

IT(RMS) 16 A

VDRM/VRRM 600/800 V

IGT ≤10 mA

ABSOLUTE MAX I MUM RATINGS

Symbol PARAMETER Value Unit

IT(RMS) RMS on-state current(full sine wave) TO-220.Non-Ins TC≤99℃ 16 A

Non repetitive surge peak on-state current t=20ms 140

ITSM (full sine wave, Tj=25℃) t= 16.7ms 150 A

I2t I2t Value for fusing t= 10ms 98 A2S

di/dt Repetitive rate of rise of on-state Current after triggering ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us 100 A/μs

IGM Peak gate current, — 2 A

VGM Peak gate voltage — 5 W

PGM Peak gate power — 5 W

PG(AV) Average gate power over any 20 ms period 0.5 W

Tstg Storage junction temperature range -40 to +150 ℃

Tj Operating junction temperature range 125 ℃

STATIC CHARACTERISTICS

Symbol Parameter Test Condition Quadrant Value Unit

MIN TYPE MAX

IGT Gate trigger current VD= 12V, IT=0. 1A Ⅰ-Ⅱ-Ⅲ - - 10 mA

VD= 12V, IT=0. 1A - 0.7 1.5

VGT Gate trigger voltage VD=400V, IT=0. 1A,Tj= 125°C 0.25 0.4 - V

VT On-state voltage IT=20A - 1.2 1.5 V

IH Holding current VD= 12V, IGT=0. 1A Ⅰ-Ⅱ-Ⅲ - - mA

Ⅰ-Ⅲ - - 60 mA

IL Latching current VD= 12V, IGT=0. 1A Ⅱ - - 90 mA

ID Off-state leakage current VD = VDRM(max); Tj= 125 ˚C - 0.1 0.5 mA

PACKAGE MECHANICAL DATA

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

Download

Hot Products

Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-220 BTA216-800B triac series is suitable for general purpose AC switching

Email to this supplier

*Subject:
*To:

Mr. John chang
*Email:
*Message:

Your message must be between 20-8000 characters

Symbol	PARAMETER		Value	Unit
IT(RMS)	RMS on-state current(full sine wave)	TO-220.Non-Ins TC≤99℃	16	A
	Non repetitive surge peak on-state current	t=20ms	140
ITSM	(full sine wave, Tj=25℃)	t= 16.7ms	150	A
I2t	I2t Value for fusing	t= 10ms	98	A2S
di/dt	Repetitive rate of rise of on-state Current after triggering	ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us	100	A/μs
IGM	Peak gate current,	—	2	A
VGM	Peak gate voltage	—	5	W
PGM	Peak gate power	—	5	W
PG(AV)	Average gate power	over any 20 ms period	0.5	W
Tstg	Storage junction temperature range	-40 to +150		℃
Tj	Operating junction temperature range	125		℃

Symbol	Parameter	Test Condition	Quadrant	Value			Unit
Symbol	Parameter	Test Condition	Quadrant	MIN	TYPE	MAX	Unit
IGT	Gate trigger current	VD= 12V, IT=0. 1A	Ⅰ-Ⅱ-Ⅲ	-	-	10	mA
		VD= 12V, IT=0. 1A		-	0.7	1.5
VGT	Gate trigger voltage	VD=400V, IT=0. 1A,Tj= 125°C		0.25	0.4	-	V
VT	On-state voltage	IT=20A		-	1.2	1.5	V
IH	Holding current	VD= 12V, IGT=0. 1A	Ⅰ-Ⅱ-Ⅲ	-	-		mA
			Ⅰ-Ⅲ	-	-	60	mA
IL	Latching current	VD= 12V, IGT=0. 1A	Ⅱ	-	-	90	mA
ID	Off-state leakage current	VD = VDRM(max); Tj= 125 ˚C		-	0.1	0.5	mA