Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > BTA26 Serie 26A BTA26-600C TO-3PA Triac
  • BTA26 Serie 26A BTA26-600C TO-3PA Triac
  • BTA26 Serie 26A BTA26-600C TO-3PA Triac
  • BTA26 Serie 26A BTA26-600C TO-3PA Triac
  • BTA26 Serie 26A BTA26-600C TO-3PA Triac
  • BTA26 Serie 26A BTA26-600C TO-3PA Triac

BTA26 Serie 26A BTA26-600C TO-3PA Triac

  • $0.7
    1000-4999
    Piece/Pieces
  • $0.55
    ≥5000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BTA26-600C

BrandYZPST

Place Of OriginChina

IT(RMS)26A

VDRM600V

VRRM600V

VTM≤1.5V

Tstg-40~150℃

Tj-40~125℃

ITSM260A

I2t350A2s

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

BTA26/BTB26Series 26A Triacs

BTA26 Serie 26A BTA26-600C TO-3PA Triac

DESCRIPTION:

With high ability to withstand the shock loading of Large current, BTA26/BTB26 series triacs provide high dv/dt    rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, BTA26 provides a rated insulation voltage of 2500 VRMS complying with UL standards

BTA26 Serie 26A BTA26-600C TO-3PA Triac

TO-3PA

MAIN FEATURES:

symbol

value

unit

IT(RMS)

26

A

VDRM/VRRM

600/800/1200/1600

V

VTM

≤1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (Tj=25)

VDRM

600/800/1200/1600

V

Repetitive peak reverse voltage (Tj=25)

VRRM

600/800/1200/1600

V

RMS on-state current

IT(RMS)

26

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

 

ITSM

 

260

 

A

I2t value for fusing (tp=10ms)

I2t

350

A2s

Critical rate of rise of on-state current(IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Peak gate power

PGM

10

W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

3 Quadrants

Parameter Value
Test Condition Quadrant CW BW Unit
IGT VD=12V, 35 50 mA
VGT RL=33Ω - - MAX 1.3 V
VGD VD=VDRM - - MIN 0.2 V
IH IT=100mA MAX 60 80 mA
- 70 90
IL IG=1.2IGT MAX 80 100 mA
VD=2/3VDRM   Tj=125 Gate open
dV/dt MIN 1000 1500 V/ µs

4 Quadrants

Parameter Value
Test Condition Quadrant C B Unit
- - 25 50 mA
IGT VD=12V, 50 70 mA
VGT RL=33Ω ALL MAX 1.5 V
VGD VD=VDRM ALL MIN 0.2 V
IH IT=100mA MAX 60 75 mA
--  70 80
IL IG=1.2IGT MAX 90 100 mA
VD=2/3VDRM   Tj=125 Gate open
dV/dt MIN 200 500 V/ µs


STATIC CHARACTERISTICS

Symbol Test Condition Value Unit
VTM ITM=35A   tp=380μs Tj=25 MAX 1.5 V
IDRM Tj=25 10 µA
IRRM VDRMVRRM Tj= 125 MAX 3 mA

TO-3P Ins

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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