Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-220 FQP3P50 is a P-Channel enhancement mode power MOSFET
  • TO-220 FQP3P50 is a P-Channel enhancement mode power MOSFET
  • TO-220 FQP3P50 is a P-Channel enhancement mode power MOSFET
  • TO-220 FQP3P50 is a P-Channel enhancement mode power MOSFET
  • TO-220 FQP3P50 is a P-Channel enhancement mode power MOSFET
  • TO-220 FQP3P50 is a P-Channel enhancement mode power MOSFET

TO-220 FQP3P50 is a P-Channel enhancement mode power MOSFET

  • $0.72
    1000-9999
    Piece/Pieces
  • $0.58
    ≥10000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-FQP3P50

BrandYZPST

Place Of OriginChina

VDSS-500V

VGSS±30V

ID Tc=25℃-2.7A

ID Tc= 100℃-1.71A

IDM-10.8A

Ptot85W

Tj150℃

Tstg-55-150℃

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:
FQP3P50 MOSFET
P/N: YZPST-FQP3P50
DESRCRIPTION:
The FQP3P50 is a P-Channel enhancement mode power
MOSFET. This power MOSFET is usually used in high-speed
switching switched mode power supplies, audio amplifier DC

motor control, and variable switching power applications.

YZPST-FQP3P50 TO-220

ABSOLUTE MAX I MUM RATINGS

Symbol Parameter Value Unit
VDSS Drain-Source Voltage -500 V
VGSS Gate-Source Voltage ±30 V
Tc=25 -2.7 A
ID Continuous Drain Current Tc= 100 -1.71 A
IDM Pulsed Drain Current -10.8 A
Ptot Power Dissipation (TC=25°C) To-220C 85 W
Tj Junction Temperature 150
Tstg Operation and Storage Temperature -205
EAS Avalanche Energy 250 mJ

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

 

Symbol Parameter Test Condition Value Unit
Min Type Max
BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID=- 250μA -500 V
VDS=-500V ,VGS=0V -1 uA
IDSS Drain-Source Leakage Current VDS=-400V,VGS=0V    -100 uA
Tc=125
IGSS Gate-Source Leakage Current VGS= ±30V ±100 nA
VGS(th) Gate Threshold Voltage VDS= VGS,ID= - 250uA -3 -5 V
RDS(ON) Static Drain-Source On-State Resistance VGS= -10V ID= -1A 5 Ω
BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, 0.42 V/

Yzpst Fqp3p50 To 220 Jpg

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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