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TO-220 FQP3P50 is a P-Channel enhancement mode power MOSFET

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TO-220 FQP3P50 is a P-Channel enhancement mode power MOSFET

$0.72

1000-9999
Piece/Pieces
$0.58

≥10000
Piece/Pieces

option:

VDSS:-500V
VGSS:±30V
ID Tc=25℃:-2.7A
ID Tc= 100℃:-1.71A
IDM:-10.8A
Ptot:85W

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-FQP3P50

Brand: YZPST

Place Of Origin: China

VDSS: -500V

VGSS: ±30V

ID Tc=25℃: -2.7A

ID Tc= 100℃: -1.71A

IDM: -10.8A

Ptot: 85W

Tj: 150℃

Tstg: -55-150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

FQP3P50 MOSFET

P/N: YZPST-FQP3P50

DESRCRIPTION:

The FQP3P50 is a P-Channel enhancement mode power

MOSFET. This power MOSFET is usually used in high-speed

switching switched mode power supplies, audio amplifier DC

motor control, and variable switching power applications.

YZPST-FQP3P50 TO-220

ABSOLUTE MAX I MUM RATINGS

Symbol	Parameter		Value	Unit
VDSS	Drain-Source Voltage		-500	V
VGSS	Gate-Source Voltage		±30	V
		Tc=25℃	-2.7	A
ID	Continuous Drain Current	Tc= 100℃	-1.71	A
IDM	Pulsed Drain Current		-10.8	A
Ptot	Power Dissipation (TC=25°C)	To-220C	85	W
Tj	Junction Temperature		150	℃
Tstg	Operation and Storage Temperature		-205	℃
EAS	Avalanche Energy		250	mJ

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol	Parameter	Test Condition	Value			Unit
Symbol	Parameter	Test Condition	Min	Type	Max	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS= 0V, ID=- 250μA	-500			V
		VDS=-500V ,VGS=0V			-1	uA
IDSS	Drain-Source Leakage Current	VDS=-400V,VGS=0V ，			-100	uA
		Tc=125℃			-100	uA
IGSS	Gate-Source Leakage Current	VGS= ±30V			±100	nA
VGS(th)	Gate Threshold Voltage	VDS= VGS,ID= - 250uA	-3		-5	V
RDS(ON)	Static Drain-Source On-State Resistance	VGS= -10V ，ID= -1A			5	Ω
∆BVDSS / ∆TJ	Breakdown Voltage Temperature Coefficient	ID = -250 µA,		0.42		V/℃