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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-220 BTA312-600B 600V Triacs sensitive gate
TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate
  • TO-220 BTA312-600B 600V Triacs sensitive gate

TO-220 BTA312-600B 600V Triacs sensitive gate

  • $0.13
    5000-19999
    Piece/Pieces
  • $0.1
    ≥20000
    Piece/Pieces
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Overview
Product Attributes

Model No.: YZPST-BTA312-600B

Brand: YZPST

Place Of Origin: China

VDRM: 600V

VRRM: 600V

IT(RMS): 12A

Tj: -40--+125℃

Tstg: -40~ 150℃

ITSM: 100A

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Air

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Triacs sensitive gate  YZPST-BTA312-600B

GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is requiredin all four quadrants.

TO-220


ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ℃)

Parameter Symbol Typ Unit
Repetitive peak VDRM 600 V
off-state voltages VRRM
RMS on-state current IT(RMS) 12 A
Non-repetitive peak on-state current ITSM 100 A
Max.Operating Tj 85 ℃
Junction temperature
Storage Temperature Tstg 110 ℃

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ )

Parameter Symbol Test       Conditions Min Typ Max Unit
Repetitive peak off-state voltages VDRM 600 V
VRRM
RMS on-state current IT(RMS) Full sine wave, Tmb≤107℃ 12 A
On-state voltage VT IT=17A — 1.3 1.55 V
Holding current IH VD  = 12 V; IGT  = 0.1 A 50 mA
Gate trigger current T2+G+ 12 50
T2+G- IGT VD=12V, IT=0.1A — 14 50 mA
T2-G- — 25 50
Latching T2+G+ 70
current T2+G- IL VD  = 12 V; IGT  = 0.1 A — — 80 mA
T2-G- 70
Gate trigger voltage VGT VD  = 12 V; IT  = 0.1 A 1.6 V


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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