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TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171

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Overview

Product Attributes

Model No.: YZPST-2SA1930

Brand: YZPST

Place Of Origin: China

VCBO: -180V

VCEO: -180V

VEBO: -5V

IC: -2A

IB: -1A

PC: 2W

PC(Tc=25℃): 20W

Tj: 150℃

Tstg: -55～150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000

Transportation: Ocean,Land

Place of Origin: CHINA

Supply Ability: 1000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Silicon PNP transistor in a TO-220F Plastic Package. P/N:YZPST-2SA1930

Silicon PNP transistor in a TO-220F Plastic Package.

Features

High fT, complementary pair with 2SC5171.

TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171

Absolute Maximum Ratings(Ta=25℃)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-180	V
Collector to Emitter Voltage	VCEO	-180	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current - Continuous	IC	-2.0	A
Base Current	IB	-1.0	A
Collector Power Dissipation	PC	2.0	W
Collector Power Dissipation	PC(Tc=25℃)	20	W
Junction Temperature	Tj	150	℃
Storage Temperature Range	Tstg	-55～150	℃

Electrical Characteristics(Ta=25℃)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	VCEO	IC=-10mA IB=0	-180			V
Collector Cut-Off Current	ICBO	VCB=-180V IE=0			-5.0	μA
Emitter Cut-Off Current	IEBO	VEB=-5.0V IC=0			-5.0	μA
DC Current Gain	hFE(1)	VCE=-5.0V IC=-100mA	100		320
DC Current Gain	hFE(2)	VCE=-5.0V IC=-1.0A	50
Collector to Emitter Saturation Voltage	VCE(sat)	IC=-1.0A IB=-100mA		-0.24	-1.0	V
Base to Emitter Voltage	VBE	VCE=-5.0V IC=-1.0A		-0.68	-1.5	V
Transition Frequency	fT	VCE=-5.0V IC=-300mA		200		MHz
Collector output capacitance	Cob	VCB=-10V IE=0 f=1.0MHz		26		pF