Home > Products > Semiconductor Plastic Package > Silicon Transistor > BC556 BC557 BC558 TO-92 Plastic-Encapsulate Transistor NPN

Contact Supplier

Mr. John chang

Leave a message

Contact Now

BC556 BC557 BC558 TO-92 Plastic-Encapsulate Transistor NPN

$8.8

100-999
Others
$7.2

≥1000
Others

option:

Collector-Base Voltage:-50V
Collector-Emitter Voltage:-45V
Emitter-Base Voltage:-5V
Collector Current-Continuous:-0.1A
Collector Power Dissipation:625mW
RθJA:200τ/W
TJ,Tstg:-55~+150T

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-BC557

Brand: YZPST

Place Of Origin: China

Collector-Base Voltage: -50V

Collector-Emitter Voltage: -45V

Emitter-Base Voltage: -5V

Collector Current-Continuous: -0.1A

Collector Power Dissipation: 625mW

RθJA: 200τ/W

TJ,Tstg: -55~+150T

Supply Ability & Additional Information

Productivity: 100000

Transportation: Ocean,Land

Supply Ability: 100000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: KPCS

TO-92 Plastic-Encapsulate Transistors

YZPST-BC556 / BC557 / BC558 TRANSISTOR (PNP)

FEATURES
High Voltage

Complement to BC546,BC547,BC548

YZPST-BC557 -1

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
BC556	TO-92	Bulk	1000pcs/Bag
BC556-TA	TO-92	Tape	2000pcs/Box
BC557	TO-92	Bulk	1000pcs/Bag
BC557-TA	TO-92	Tape	2000pcs/Box
BC558	TO-92	Bulk	1000pcs/Bag
BC558-TA	TO-92	Tape	2000pcs/Box

MAXIMUM RATINGS (Ta=25τ unless otherwise noted)

Symbol	Parameter		Value	Unit
		BC556	-80
VCBO	Collector-Base Voltage	BC557	-50	V
		BC558	-30
		BC556	-65
VCEO	Collector-Emitter Voltage	BC557	-45	V
		BC558	-30
VEBO	Emitter-Base Voltage		-5	V
IC	Collector Current-Continuous		-0.1	A
PC	Collector Power Dissipation		625	mW
RθJA	Thermal Resistance from Junction to Ambient		200	τ/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55~+150	τ

Ta =25 τ unless otherwise specified

Parameter		Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base	BC556			-80
breakdown voltage	BC557	V(BR)CBO	IC= -0.1mA,IE=0	-50			V
	BC558			-30
Collector-emitter	BC556			-65
breakdown voltage	BC557	V(BR)CEO	IC=-2mA,IB=0	-45			V
	BC558			-30
Emitter-base breakdown voltage		V(BR)EBO	IE=-100μA,IC=0	-5			V
	BC556		VCB=-70V,IE=0			-0.1	μA
Collector cut-off current	BC557	ICBO	VCB=-45V,IE=0			-0.1	μA
	BC558		VCB=-25V,IE=0			-0.1	μA
	BC556		VCE=-60V,IB=0			-0.1	μA
Collector cut-off current	BC557	ICEO	VCE=-40V,IB=0			-0.1	μA
	BC558		VCE=-25V,IB=0			-0.1	μA
Emitter cut-off current		IEBO	VEB=-5V,IC=0			-0.1	μA
DC current gain		*	VCE=-5V, IC=-2mA	120		800
DC current gain		hFE	VCE=-5V, IC=-2mA	120		800
Collector-emitter saturation voltage		VCE(sat)	IC=-10mA,IB=-0.5mA			-0.3	V
Collector-emitter saturation voltage		VCE(sat)	IC=-100mA,IB=-5mA			-0.65	V
Base-emitter saturation voltage		VBE(sat)	IC=-10mA,IB=-0.5mA			-0.8	V
Base-emitter saturation voltage		VBE(sat)	IC=-100mA,IB=-5mA			-1	V
Base-emitter voltage		VBE	VCE=-5V, IC=-2mA	-0.55		-0.7	V
Base-emitter voltage		VBE	VCE=-5V, IC=-10mA			-0.82	V
Collector output capacitance		Cob	VCB=-10V,IE=0, f=1MHz			6	pF
	BC556				150		MHz
Transition frequency	BC557	fT	VCE=-5V,IC=-10mA, f=100MHz		150		MHz
	BC558				150		MHz

CLASSIFICATION of hFE

RANK	A	B	C
RANGE	120-220	180-460	420-800

TO-92 Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
Symbol	Min	Max	Min	Max
A	3.3	3.7	0.13	0.146
A1	1.1	1.4	0.043	0.055
b	0.38	0.55	0.015	0.022
c	0.36	0.51	0.014	0.02
D	4.3	4.7	0.169	0.185
D1	3.43		0.135
E	4.3	4.7	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.44	2.64	0.096	0.104
L	14.1	14.5	0.555	0.571
。		1.6		0.063
h	0	0.38	0	0.015