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Home > Products > Semiconductor Plastic Package > Silicon Transistor > S9013 TO-92 Transistor NPN Complementary to S9012
S9013 TO-92 Transistor NPN Complementary to S9012
  • S9013 TO-92 Transistor NPN Complementary to S9012
  • S9013 TO-92 Transistor NPN Complementary to S9012
  • S9013 TO-92 Transistor NPN Complementary to S9012
  • S9013 TO-92 Transistor NPN Complementary to S9012
  • S9013 TO-92 Transistor NPN Complementary to S9012

S9013 TO-92 Transistor NPN Complementary to S9012

  • $9.5
    100-999
    Others
  • $8.1
    ≥1000
    Others
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Overview
Product Attributes

Model No.: YZPST-S9013

Brand: YZPST

Place Of Origin: China

Collector-Base Voltage: 40V

Collector-Emitter Voltage: 25V

Emitter-Base Voltage: 5V

Collector Current -Continuous: 0.5A

Collector Power Dissipation: 625mW

Thermal Resist Ance F Rom Junction Fo Am: 200℃ / W

TJ,Tstg: -55 ~＋150℃

Supply Ability & Additional Information

Productivity: 10000

Transportation: Ocean,Land

Supply Ability: 1000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
KPCS
TO-92 Plastic-Encapsulate Transistors
YZPST-S9013      TRANSISTOR (NPN)
FEATURES
    Complementary to S9012

    Excellent hFE linearity

YZPST-S9013 TO92

ORDERING INFORMATION

PartNumber

Package

PackingMethod

PackQuantity

S9013

TO-92

Bulk

1000pcs/Bag

S9013-tA

TO-92

Tape

2000pcs/Box


MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

SymboI

Parameter

VaIue

Unit

VCB0

Collector-Base Voltage

40

V

VCE0

Collector-Emitter Voltage

25

V

VEB0

Emitter-Base Voltage

5

V

1C

Collector Current -Continuous

0.5

A

PD

Collector Power Dissipation

625

mW

R9 JA

Thermal Resist ance f rom Junction fo Ambient

200

℃ / W

TJ,Tstg

JperTti0ncunati0nTnCRt0rTgeSemperTtureOTnge

-55 ~＋150

℃

Ta=25 ℃ unless otherwise specified

Parameter

Symbol

Test     conditions

Min

Typ

Max

Unit

CoIIector base

V(BR)CBO

IC= 100μA , IE=0

40

 

 

V

breakdown

voItage

CoIIector emitter

V(BR)CEO

IC= 1mA ,  IB=0

25

 

 

V

breakdown

voItage

Emitter base

V(BR)EBO

IE= 100μA , IC=0

5

 

 

V

breakdown

voItage

CoIIector cut off

ICBO

VCB= 40V ,  IE=0

 

 

0.1

uA

current

CoIIector cut off

ICEO

VCE=20V ,  IE=0

 

 

0.1

uA

current

Emitter

IEBO

VEB= 5V, IC=0

 

 

0.1

uA

cut off

current

 

hFE(1)

VCE=1V, IC=50mA

64

 

400

 

DC

current

gain

hFE(2)

VCE=1V, IC= 500mA

40

 

 

 

CoIIector emitter

VCE(sat)

IC= 500mA, IB= 50mA

 

 

0.6

V

saturation

voItage

Base emitter

VBE(sat)

IC= 500mA, IB= 50mA

 

 

1.2

V

voItage

 

 

 

 

 

 

 

Transition

fT

VCE=6V,IC=20mA,f=30MHz

150

MHz

frequency

 

 

 


CLASS1F1CAT10N0FhFE(1)

Rank

D

E

F

G

H

I

J

Range

64-91

78- 112

96- 135

112- 166

144-202

190-300

300-400

Outline Dimensions

Outline Dimensions

SymboI

Dimensions

Dimensions

 1n

 1n

MiIIimeters

1nches

Min

Max

Min

Max

A

3.3

3.7

0.13

0.146

A1

1.1

1.4

0.043

0.055

b

0.38

0.55

0.015

0.022

c

0.36

0.51

0.014

0.02

D

4.3

4.7

0.169

0.185

D1

3.43

 

0.135

 

E

4.3

4.7

0.169

0.185

e

1.270 TYP

0.050 TYP

1

2.44

2.64

0.096

0.104

L

14.1

14.5

0.555

0.571

o

 

1.6

 

0.063

h

0

0.38

0

0.015



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