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High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558

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Overview

Product Attributes

Model No.: YZPST-BC547

Place Of Origin: China

Collector-Base Voltage: 50V

Collector-Emitter Voltage: 45V

Emitter-Base Voltage: 6V

Collector Current-Continuous: 0.1A

Collector Power Dissipation: 625mW

TJ,Tstg:: -55~+150℃

Supply Ability & Additional Information

Transportation: Ocean,Land

Supply Ability: 10000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

TO-92 Plastic-Encapsulate Transistors

YZPST-BC546 / BC547 / BC548 TRANSISTOR (NPN)
FEATURES
High Voltage
Complement to BC556,BC557,BC558
YZPST-BC547 TO92

ORDERING INFORMATION

MAXIMUM RATINGS (Ta=25τ unless otherwise noted)

Symbol	Parameter		Value	Unit
		BC546	80
V CBO	Collector-Base Voltage	BC547	50	V
		BC548	30
		BC546	65
V CEO	Collector-Emitter Voltage	BC547	45	V
		BC548	30
		BC546	6	V
V EBO	Emitter-Base Voltage	BC547	6	V
		BC548	5	V
IC	Collector Current-Continuous		0.1	A
P C	Collector Power Dissipation		625	mW
R θ JA	Thermal Resistance from Junction to Ambient		200	τ /W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55~+150	τ

Ta =25 τ unless otherwise specified

ELECTRICAL CHARACTERISTICS =25τ unless otherwise

Parameter		Symbol	Test conditions	Min	Typ	Max	Unit
	BC546			80
Collector-base breakdown voltage	BC547	V(BR)CBO	IC= 0.1mA,IE=0	50			V
	BC548			30
	BC546			65
Collector-emitter breakdown voltage	BC547	V(BR)CEO	IC=1mA,IB=0	45			V
	BC548			30
	BC546			6
Emitter-base breakdown voltage	BC547	V(BR)EBO	IE=10μA,IC=0	6			V
	BC548			5
	BC546		VCB=70V,IE=0			0.1	μA
Collector cut-off current	BC547	ICBO	VCB=50V,IE=0			0.1	μA
	BC548		VCB=30V,IE=0			0.1	μA
	BC546		VCE=60V,IB=0			0.1	μA
Collector cut-off current	BC547	ICEO	VCE=45V,IB=0			0.1	μA
	BC548		VCE=30V,IB=0			0.1	μA
Emitter cut-off current		IEBO	VEB=5V,IC=0			0.1	μA
DC current gain		*	VCE=5V, IC=2mA	110		800
DC current gain		hFE	VCE=5V, IC=2mA	110		800
Collector-emitter saturation voltage		VCE(sat)	IC=100mA,IB=5mA			0.3	V
Base-emitter saturation voltage		VBE(sat)	IC=100mA,IB=5mA			1.1	V
Base-emitter voltage		VBE	VCE=5V, IC=2mA	0.58		0.7	V
Base-emitter voltage		VBE	VCE=5V, IC=10mA			0.75	V
Collector output capacitance		Cob	VCB=10V,IE=0, f=1MHz			4.5	pF
Transition frequency		fT	VCE=5V,IC=10mA, f=100MHz	150			MH

TO-92 Package Outline Dimensions