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The MJD31C is Silicon NPN power transistors TO-252

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Overview

Product Attributes

Model No.: YZPST-MJD31C

Brand: YZPST

Place Of Origin: China

VCBO: 100V

VCEO: 100V

VEBO: 5V

IC: 3A

ICM: 5A

IB: 1A

PTOT: 15W

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000000000

Transportation: Ocean,Land,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Silicon NPN Power Transistors

P/N: YZPST-MJD31C

DESRCRIPTION:

The MJD31C is Silicon NPN power transistors ，designed for medium power linear switching applications.

YZPST-MJD31C TO-252

ABSOLUTE MAX I MUM RATINGS

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	100	V
VCEO	Collector-Emitter Voltage	100	V
VEBO	Emitter-Base Voltage	5	V
IC	Continuous Collector Current	3	A
ICM	Collector current-Pulse	5	A
IB	Base Current	1	A
PTOT	Total dissipation at Tcase=25 ℃	15	W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature Range	-55〜 150	℃

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol	Parameter	Test Condition	Value			Unit
Symbol	Parameter	Test Condition	Min	Type	Max	Unit
ICEO	Collector Cutoff Current	VCE= 60 V			0.3	mA
IEBO	Emitter Cutoff Current	VEB= 5 V			1	mA
VCEO（SUS）	Collector-Emitter Sustaining Voltage	IC= 30mA	100			V
VCEsat	Collector-Emitter Saturation Voltage	IC=3A IB=0.375A			1.2	V
VBE	Base-Emitter On Voltage	IC=3A ; VCE=4V			1.8	V
hFE- 1	DC current gain	IC= 1A ; VCE=4V	25
hFE-2	DC current gain	IC=3A ; VCE=4V	10		50
fT	Transiton frequency	IC=0.5A ; VCE= 10V	3			MHz