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Model No.: YZPST-SP13N50K
Brand: YZPST
Place Of Origin: China
Package: TO-220
VDSS: 500V
ID: 13A
IDM: 52A
VGSS: ±30V
EAS: 550mJ
EAR: 65mJ
PD: 60W
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Power Factor Correction (PFC)
Device Ordering Marking Packing Information Ordering Number Package Marking Packing SP13N50KF TO-220 SP13N50KF Tube
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol TO-220 Unit Drain-Source Voltage (VGS = 0V) VDSS 500 V Continuous Drain Current ID 13 A Pulsed Drain Current (note1) IDM 52 A Gate-Source Voltage VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 550 mJ Repetitive Avalanche Energy (note1) EAR 65 mJ Power Dissipation (TC = 25ºC) PD 60 W Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Resistance Value Parameter Symbol TO-220 Unit Thermal Resistance, Junction-to-Case RthJC 2.1 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 100
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.