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100V N-Channel Super Gate Trench Power MOSFET Transistor

$0.35

1000-4999
Piece/Pieces
$0.28

≥5000
Piece/Pieces

option:

VDSS:100V
ID:135A
IDM:520A
VGSS:±20V
EAS:780mJ
PD:208W

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-SS044N10AP

Brand: YZPST

Application: Microphone, Not Applicable

Supply Type: Original Manufacturer

Reference Materials: Datasheet, Photo

Package Type: Surface Mount

Installation Method: Not Applicable

FET Function: Not Applicable

Configuration: Not Applicable

VDSS: 100V

ID: 135A

IDM: 520A

VGSS: ±20V

EAS: 780mJ

PD: 208W

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Air

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

100V N-Channel Super Gate Trench Power MOSFET

P/N: YZPST-SS044N10AP

FEATURES

Super TrenchFET® Power MOSFET

l100% avalanche tested

Improved dv/dt capability

APPLICATIONS

Primary Side Switch

Other Applications

Uninterruptible power supply

Device Ordering Marking Packing Information

Ordering Number

Package

Marking

Packing

SS044N10AP

TO-220

YZPST

SS044N10AP

Tube

Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter	Symbol	Value	Unit
Parameter	Symbol	TO-220	Unit
Drain-Source Voltage (VGS = 0V)	VDSS	100	V
Continuous Drain Current	ID	135	A
Pulsed Drain Current (note1)	IDM	520	A
Gate-Source Voltage	VGSS	±20	V
Single Pulse Avalanche Energy (note2)	EAS	780	mJ
Power Dissipation (TC = 25ºC)	PD	208	W
Operating Junction and Storage Temperature Range	TJ, Tstg	-55~+150	ºC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Resistance
Parameter	Symbol	Value	Unit
		TO-220
Thermal Resistance, Junction-to-Case	RthJC	0.60	ºC/W
Thermal Resistance, Junction-to-Ambient	RthJA	62.5

Specifications TJ = 25ºC, unless otherwise noted
Parameter	Symbol	Test Conditions	Value			Unit
Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Static
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250µA	100	--	--	V
Zero Gate Voltage Drain Current	IDSS	VDS =100, VGS = 0V, TJ = 25ºC	--	--	1.0	μA
Gate-Source Leakage	IGSS	VGS = ±20V	--	--	±100	nA
Gate-Source Threshold Voltage	VGS(th)	VDS = 250µA	2.0	--	4.0	V
Drain-Source On-Resistance (Note3)	RDS(on)	VGS = 10V, ID =50A	--	3.6	4.4	mΩ
Dynamic
Input Capacitance	Ciss	VGS = 0V, VDS = 50V, f = 1.0MHz	--	7300	--	pF
Output Capacitance	Coss		--	850	--
Reverse Transfer Capacitance	Crss		--	25	--
Total Gate Charge	Qg	VDD = 50V, ID = 20A, VGS = 10V	--	114	--	nC
Gate-Source Charge	Qgs		--	37	--
Gate-Drain Charge	Qgd		--	26	--
Turn-on Delay Time	td(on)	VDD = 50V, ID =50A,VGS = 10V RG =3.0 Ω	--	32	--	ns
Turn-on Rise Time	tr		--	50	--
Turn-off Delay Time	td(off)		--	83	--
Turn-off Fall Time	tf		--	30	--
Drain-Source Body Diode Characteristics
Continuous Body Diode Current	IS	TC = 25 ºC	--	--	135	A
Pulsed Diode Forward Current	ISM	TC = 25 ºC	--	--	520	A
Body Diode Voltage	VSD	TJ = 25ºC, ISD = 50A, VGS = 0V	--	0.9	1.2	V
Reverse Recovery Time	trr	VGS = 0V,IS = 50A, diF/dt =500A /μs	--	75	--	ns
Reverse Recovery Charge	Qrr	VGS = 0V,IS = 50A, diF/dt =500A /μs	--	160	--	nC