Home > Products > Semiconductor Plastic Package > Silicon Transistor > 100V N-Channel Super Gate Trench Power MOSFET Transistor
  • 100V N-Channel Super Gate Trench Power MOSFET Transistor
  • 100V N-Channel Super Gate Trench Power MOSFET Transistor
  • 100V N-Channel Super Gate Trench Power MOSFET Transistor
  • 100V N-Channel Super Gate Trench Power MOSFET Transistor
  • 100V N-Channel Super Gate Trench Power MOSFET Transistor

100V N-Channel Super Gate Trench Power MOSFET Transistor

  • $0.35
    1000-4999
    Piece/Pieces
  • $0.28
    ≥5000
    Piece/Pieces
Share:
Chat Now
  • Product Description
Overview
Product Attributes

Model No.YZPST-SS044N10AP

BrandYZPST

ApplicationMicrophone, Not Applicable

Supply TypeOriginal Manufacturer

Reference MaterialsDatasheet, Photo

Package TypeSurface Mount

Installation MethodNot Applicable

FET FunctionNot Applicable

ConfigurationNot Applicable

VDSS100V

ID135A

IDM520A

VGSS±20V

EAS780mJ

PD208W

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Air

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
100V N-Channel Super Gate Trench Power MOSFET
P/N: YZPST-SS044N10AP
FEATURES
Super TrenchFET® Power MOSFET
l100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Primary Side Switch
Other Applications
Uninterruptible power supply
YZPST-SS044N10AP TO-220

Device Ordering Marking Packing Information

Ordering Number

Package

Marking

Packing

 

SS044N10AP

 

TO-220

YZPST

SS044N10AP

 

Tube


Absolute Maximum Ratings  TC  = 25ºC, unless otherwise noted

 

Parameter

 

Symbol

Value

 

Unit

TO-220

Drain-Source Voltage (VGS  = 0V)

VDSS

100

V

Continuous Drain Current

ID

135

A

Pulsed Drain Current                                          (note1)

IDM

520

A

Gate-Source Voltage

VGSS

±20

V

Single Pulse Avalanche Energy                         (note2)

EAS

780

mJ

Power Dissipation (TC  = 25ºC)

PD

208

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55~+150

ºC

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.


Thermal Resistance

 

Parameter

 

Symbol

Value

 

Unit

TO-220

Thermal Resistance, Junction-to-Case

RthJC

0.60

ºC/W

Thermal Resistance, Junction-to-Ambient

RthJA

62.5


Specifications  TJ  = 25ºC, unless otherwise noted

 

Parameter

 

Symbol

 

Test Conditions

Value

 

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID  = 250µA

100

--

--

V

Zero Gate Voltage Drain Current

IDSS

VDS =100, VGS  = 0V, TJ  = 25ºC

--

--

1.0

μA

Gate-Source Leakage

IGSS

VGS  = ±20V

--

--

±100

nA

Gate-Source Threshold Voltage

VGS(th)

VDS =  250µA

2.0

--

4.0

V

Drain-Source On-Resistance (Note3)

RDS(on)

VGS  = 10V, ID  =50A

--

3.6

4.4

mΩ

Dynamic

Input Capacitance

Ciss

 

VGS = 0V,  VDS = 50V, f = 1.0MHz

--

7300

--

 

pF

Output Capacitance

Coss

--

850

--

Reverse Transfer Capacitance

Crss

--

25

--

Total Gate Charge

Qg

 

VDD = 50V, ID  = 20A, VGS  = 10V

--

114

--

 

nC

Gate-Source Charge

Qgs

--

37

--

Gate-Drain Charge

Qgd

--

26

--

Turn-on Delay Time

td(on)

 

VDD = 50V, ID  =50A,VGS  = 10V RG =3.0 

--

32

--

 

 

ns

Turn-on Rise Time

tr

--

50

--

Turn-off Delay Time

td(off)

--

83

--

Turn-off Fall Time

tf

--

30

--

Drain-Source Body Diode Characteristics

Continuous Body Diode Current

IS

 

TC = 25 ºC

--

--

135

 

A

Pulsed Diode Forward Current

ISM

--

--

520

Body Diode Voltage

VSD

TJ  = 25ºC, ISD  = 50A, VGS  = 0V

--

0.9

1.2

V

Reverse Recovery Time

trr

VGS = 0V,IS  = 50A, diF/dt =500A /μs

--

75

--

ns

Reverse Recovery Charge

Qrr

--

160

--

nC

Notes

1.    Repetitive Rating: Pulse width limited by maximum junction temperature

2.    VDD  = 50V, RG  = 25  , Starting TJ  = 25 ºC

3.    Pulse Test: Pulse width  300μs, Duty Cycle  1%

Product Categories : Semiconductor Plastic Package > Silicon Transistor

Download
Home > Products > Semiconductor Plastic Package > Silicon Transistor > 100V N-Channel Super Gate Trench Power MOSFET Transistor
Email to this supplier
  • *Subject:
  • *To:
    Mr. John chang
  • *Email:
  • *Message:
    Your message must be between 20-8000 characters
Send Inquiry
*
*

Related Products List

Home

Product

Whatsapp

About Us

Inquiry

苏ICP备05018286号-1
We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send